VIN = 0 V, VDD = 1.8 V Weak Pullup On, Vin = 0 V, VDD = 3.6 V — VDD – 0.7 VDD – 0.1 —— See Chart ——— See Chart ——— V 0.6 0.1 — ——— VDD – 0.6 0.7 x VDD ——— —— See Chart ——— 4 20 0.6 0.1 ——— 0.6 0.3 x VDD ±1 — 35 V V V V...
Pullup Off Weak Pullup On, VIN = 0 V, VDD = 1.8 V Weak Pullup On, Vin = 0 V, VDD = 3.6 V ——— VDD – 0.6 0.7 x VDD ——— See Chart ——— 4 20 0.6 0.1 ——— 0.6 0.3 x VDD ±1 — 35 ——— See Chart 0.6 0.1 — V V V V µA 52 Rev. 1.0 C8051F99x-...
Samsung Confidential 16 K9K8G08U0B K9WAG08U1B NAND Flash Technical Notes (Continued) Erase Flow Chart Advance FLASH MEMORY Read Flow Chart Start Write 60h Write Block Address Start Write 00h Write Address Write D0h Write 30h Read Status Register Read Data I/O 6 = 1 ? or R/B = 1 ?
Port I/O DC Electrical Characteristics Parameters Test Condition Typ VDD – 0.7 VDD – 0.1 —— See Chart —— — VDD – 0.7 — VDD – 0.1 See Chart — ——— —— See Chart 0.6 0.1 — ——— —— See Chart 0.6 0.1 — VDD = 2.0 to 3.6 V VDD – 0.6 — — V VDD = 0.9 ...
VIN = 0 V, VDD = 1.8 V Weak Pullup On, Vin = 0 V, VDD = 3.6 V — VDD – 0.7 VDD – 0.1 —— See Chart ——— See Chart ——— V 0.6 0.1 — ——— VDD – 0.6 0.7 x VDD ——— —— See Chart ——— 4 20 0.6 0.1 ——— 0.6 0.3 x VDD ±1 — 35 V V V V...
Port I/O DC Electrical Characteristics Parameters Test Condition Typ VDD – 0.7 VDD – 0.1 —— See Chart —— — VDD – 0.7 — VDD – 0.1 See Chart — ——— —— See Chart 0.6 0.1 — ——— —— See Chart 0.6 0.1 — VDD = 2.0 to 3.6 V VDD – 0.6 — — V VDD = 0.9 ...