If one silicon diode and one germanium diode are connected in series, the voltage drop across the combination of the two diodes will be equal to ( ).相关知识点: 试题来源: 解析 the forward drop equal to that of the sum of the voltage drops across the two diodes ...
The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.Difeng Zhu...
A. the forward drop equal to that of the difference of the voltage drops across the two diodes B. the forward drop equal to that of the germanium diode C. the forward drop equal to that of the silicon diode D. the forward drop equal to that of the sum of the voltage drops across ...
Quick Summary:Germanium fuzz is less harsh, more expensive and gives a vintage sound. Silicon fuzz is harsher with more gain. Silicon fuzz pedals are usually cheaper and easy to mass produce in today’s market because most use modern low cost transistors. You should probably go with a battery...
that are doped so that either an abundance or a lack of free eletrons exists.In the former case,the semiconductor is called n-type,and in the latter case ,p-type.By combining n-type and p-type materials,a diode can be produced. 晶体管由半导体,这些被做是材料,例如硅或锗,被掺杂,以便...
However, the relatively low band gap resulting in a three orders of magnitude higher intrinsic carrier concentration (ni) at room temperature, the lack of a stable oxide and large surface state densities relegated Ge to the number 2 position behind silicon (Si).4 After the introduction of Si ...
High performance planar germanium-on-silicon single-photon avalanche diode detectors. Nat. Commun. 10, 1086 (2019). Article PubMed PubMed Central ADS Google Scholar Ferre Llin, L. et al. High sensitivity Ge-on-Si single-photon avalanche diode detectors. Opt. Lett. 45, 6406–6409 (2020)...
Model name:PMEG200G30ELPX SOD-128;Part Status:Obsolete;Technology:SiGe (Silicon Germanium);Voltage - DC Reverse (Vr) (Max):200 V;Current - Average Rectified (Io):3A;Voltage - Forward (Vf) (Max) @ If:880 mV @ 3 A;Mounting Type:Surface Mount;Reverse Recove
On diode thermometers Forward voltage vs. temperature characteristics are presented for 3 groups of silicon planar p- n junction diodes for the 4–300°K temperature range. Grou... N Sclar,DB Pollock - Solid-State Electronics 被引量: 19发表: 1972年 New Generation of Resistance Thermometers ...
semiconductor-based single-photon detectors typically exhibit relatively poor performance compared with all-silicon devices operating at shorter wavelengths. Here we show a new generation of planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short-wave infrared ope...