Microstructural properties of Ce1-x GdxO2-未 (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with...
Microstructural properties of Ce1-x Gd x O2-未 (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser ...
The as-grown single crystalline Gd_2O_3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd_2O_3/Si(100) inQing-Qing Sun...
Parasad K,Fing F,Curtins H,Shah A,Baurman J.Preparation and characterizaion of highly conductive (100 S/cm) phosphourus doped uc-Si:H films deposited using the VHF-GD technique. Materials Research Society Symposium Proceedings . 1990