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Tunnel field-effect transistorGate-controlled homojunctionSub-thermionic subthreshold swingBand-to-band tunnelingTransition metal dichalcogenidesA tunnel field-effect transistor (TFET) activated by a quantum band-to-band tunneling mechanism has encouraged the acceleration of nanodevices owing to its capability ...
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In this paper, we report a unique type-II band alignment ReS2/MoTe2 heterojunction with rectification inversion due to the fact the bottom few-layer MoTe2 can be easily tuned from p-type to n-type state through the applied back-gate voltage. Then we study photodetection properties of ReS2...
gate‐switchable devicesoptoelectronic logic devicesphotovoltaic effectself‐driven devicesvan der Waals heterojunctionRecently, van der Waals heterojunction based on 2D materials emerges as a promising technology for optoelectronic integrated circuits. Here, a selfヾriven optoelectronic logic device is ...
Furthermore, the gate voltage can completely turn off the device and even enhance the rectification. A ternary inverter based on the isotype MoTe/SnSheterojunction and a SnSchannel transistor is demonstrated for potential multivalued logic applications. Our results suggest that the isotype vdW ...
Thus, a 2-dimensional transition metal dichalcogenides (MoTe2) is preferred for designing the device structure. The back-gate technique is used for better-controlled channel operation. The effect of variation in the work function and length of back-gate and density of interface trap charge on ...
Van der der Waals heterostructure photodiodes based on stacked 1D Te nanowires and 2D MoTe2 flakes are proposed. Rectification inversion is realized under different gate voltage because Te shows p‐type while MoTe2 shows ambipolar properties. The operation mechanism is described with band structure ...