The current status of plasma grown silicon dioxide layers on SiGe epitaxial layers for surface passivation and possible gate oxide applicationNo AbstractHall, S.Goh, I. S.Eccleston, W.Zhang, J. F.COLLOQUIUM DIGEST- IEE
A gate insulation layer(102) is formed on the gate electrode layer. An oxide semiconductor layer(103) containing the oxidation silicon is formed on the gate isolation layer. A source electrode layer or drain electrode layers(105a, 105b) is overlapped with one part of the oxide semiconductor ...
This modeling accounts for the VT shift as a function of trapped charge, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance.doi:10.1587/transele.E92.C.659Doo-Hyun KIM...