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For the switching performance of low-voltage (LV) power MOSFETs, the gate-drain charge density (Qgd) is an important parameter. The so-called figure-of-merit, which is defined as the product of the specific on-resistance (Rds,on) and Qgd is commonly used for quantifying the switching perfo...
The charge carrier transport coefficients of InAs epilayers, grown on semi-insulating GaAs by chemical vapor phase heteroepitaxy, were investigated by means of gate-voltage-controlled electrical and galvanomagnetic measurements made on metal-oxide-semiconductor structures. The capacitance versus gate voltage...
two phase overlapping gate CCDfringing field driftthermal diffusion currentsCharge transfer phenomenon in charge-coupled devices is characterized by a nonlinear ... CH Chan,SG Chamberlain - 《Solid State Electronics》 被引量: 33发表: 1974年 Floating gate amplifier using conductive coupling for charge ...
We have observed charge trapping during constant voltage stress in Hf-based high-kappa dielectrics at deep traps as well as at the shallow traps. Delta V-FB and leakage current dependence on these deep traps further suggest that trapping at deep levels inhibits fast Delta V-T recovery. The ea...
It is shown that the main degradation issues in the Si power VDMOSFETs are the charge trapping and the trap creation at the interface of the gate dielectric, induced by energetic free carriers which have sufficient energy to cross the SiO 2/Si barrier. 展开 ...
The shifts are found to be governed by the effective charges on the absorbing ions, which have been calculated using Suchet's theory. For the compounds GaSe and GaTe, however, the effective ionic charges cannot be calculated for want of data on the divalent radius of gallium. The plot of...
It is found that charge, sharing, avalanche multiplication, grain siz... IW Wu,T Huang,AG Lewis,... - 《Mrs Proceedings》 被引量: 4发表: 1990年 Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design This study investigates how incorporating a ...
Online Condition Monitoring of IGBT Modules Using Gate-Charge Identification Insulated gate bipolar transistorPower cycling testPower converters have been widely used in safety-critical applications, such as marine, aerospace, electric ... MHM Sathik,AK Gupta - Applied Power Electronics Conference & Expos...
We present a large/small-signal, non-quasi-static, charge conserving, SOI MOSFET modeling technique suitable for DC and high frequency circuit design. The ... S Akhtar,P Roblin - 《Analog Integrated Circuits & Signal Processing》 被引量: 13发表: 2000年 RF CMOS modeling: a novel empirical ...