A method for estimating the junction temperature based on the static and quasi-static gate-emitter threshold voltage has been previously presented. However, several questions that remained open, such as the physical meaning of the estimated temperature and influence of external parameters in the ...
The emitter-base contact dopant region is disposed at a distance away from a channel near the trench gates for reducing an emitter-base resistance without increasing a gate-emitter threshold voltage.doi:US20100193835 A1Fwu-Iuan HshiehUSUS20100193835 * Feb 5, 2009 Aug 5, 2010 Force-Mos ...
PURPOSE: To provide a manufacturing method of a self-aligning gate structure capable of obtaining a larger electron emission current produced by a lower electron emission threshold voltage when any emitter-gate voltage is velated.DOAN TRUNG T
PURPOSE: To provide a manufacturing method of a self-aligning gate structure capable of obtaining a larger electron emission current produced by a lower electron emission threshold voltage when any emitter-gate voltage is velated. ;CONSTITUTION: An electron emission emitter 13, a dielectric layer 18...
The circuitry is further operable to combine the pulse with a control signal applied to a gate of the IGBT so as to momentarily raise the gate voltage of the IGBT during turn-off of the IGBT to above a threshold voltage of the IGBT for the duration of the pulse. A corresponding method ...
PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-aligning gate structure, by which a greater electron-emitting current can be obtained at a lower electron- emission threshold voltage as to any emitter-gate voltage.DOAN TRUNG T...
By applying a gate voltage below the threshold of emission to one of the gates, the device can then be activated by the second gate. Integration of this device into a matrix-addressable array can be accomplished via a single cross-over structure without the need of emitter isolation....
The fuse electrically connects the conducting gate electrode layer to the voltage source, and the fuse electrically disconnects the conducting gate electrode layer from the voltage supply line when the voltage and current of the conducting gate electrode layer exceeds a threshold value....
The circuits are also being operable to combine pulse with a control signal to a gate of the igbt is applied to the gate voltage of the igbt temporarily during the disconnection of the igbt by means of a threshold voltage of the igbt during the duration of the pulse to increase. A ...
PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-aligning gate structure, by which a greater electron-emitting current can be obtained at a lower electron- emission threshold voltage as to any emitter-gate voltage. ;SOLUTION: This method is for forming a self-aligning grid ...