Design Support Videos Training SupportGate driver ICs subcategories Expand all subcategories Non-isolated, low-side Gate Driver ICs Isolated Gate Driver ICs Level-Shift Gate Driver ICs Automotive gate driver ICs Every switch needs a driver – the right driver makes a difference. Power electron...
Candidates are allowed to appear in any one or up-to two papers of the combination. However, only single application forms are being accepted. More than one application form will be rejected without any refund of the application fee. While filling application form, applicants have to choosethree...
Hello, thanks a lot for the reference design and other Application notes. They were really helpful. I have the following queries: 1-A: The peak output power dissipation of the Gate Driver is not available in the datasheet, EiceDRIVER™ 2EDi Product Family Dual-channel isolated 2EDSx reinfo...
In an optimum design the gate drive speed at turn-on is matched to the diode switching characteristic. Considering also that the Miller region is closer to GND than to the final gate drive voltage VDRV, a higher voltage can be applied across the driver output impedance and the gate resistor...
IC. If in the application the ground potential of the gate-driver IC shifts excessively, false triggering of the gate-driver IC can occur. Overcome ground-shift challenges in your design with Infineon’s single-channel non-isolated EiceDRIVER™ gate-driver ICs, which have truly differential ...
2.1. Design of the Improved Current-Sharing Imbalance Control Model The improved current-sharing imbalance control model considering multiple parasitic parameters is designed, where the design of a parallel single-channel circuit is shown in Figure 1. According to the standard setting of multiple parasi...
The input/output buffer information specification (IBIS) is a device-modeling standard that was developed in 1993 by a consortium of companies from within the electronic design industry. IBIS allows the development of device models that preserve the proprietary nature of integrated circuit devic...
This hefty driver current minimizes the FET parasitic "Miller" effects which would otherwise result in poor transi- 3-316 APPLICATION NOTE tion performance. Higher currents are possible with this driver, however the limiting factor soon be- comes the parasitic series inductance of the FET package ...
monitoring versus small footprint, and cover key requirements for gate drive, short-circuit protection, low delay, working voltage, high frequency switching, fast error response on the drive side, and scalable monitoring to deliver performance in accuracy, speed, and resolution on the sense side. ...
Application Notes Article Application Presentation Editorials Design Support All (13) Boards & Designs (11) Simulation Tools (1) Services (1) How to choose gate driver for SiC MOSFETs and SiC MOSFET modules Share With this training you will learn how to calculate a reference gate resistance value...