GATE 2024 Exam Analysis with Detailed Solutions for Mechanical, Civil, Electrical, Computer Science, Electronics & Communication.
GATE Paper Analysis 2023: IIT Kharagpur has successfully conducted the GATE 2023 exam on 5, 6, 12, and 13 February 2023. Find the GATE 2023 paper review and detailed topic-wise analysis here.
A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric ...
In this paper, we report the fabrication and characterization of a simple gate-free graphene device. The graphene sheets are made by mechanical exfoliation from bulk graphite and then placed onto a silicon wafer with a thermal oxidization layer. Platinum contact electrodes are fabricated with a ...
Column generation based solution for bi-objective gate assignment problems In this paper, we present a column generation-based algorithm for the bi-objective gate assignment problem (GAP) to generate gate schedules that minimize s... GS Da,F Gzara - 《Mathematical Methods of Operations Research》...
(2013). Enhanced sensing properties by dual-gate ion- sensitive field-effect transistor using the solution-processed Al2O3 sensing membranes. Japanese ... TE Bae,HJ Jang,SW Lee,... - 《Japanese Journal of Applied Physics》 被引量: 4发表: 2013年 A Study on Dual-Gate Dielectric Face Tunne...
In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and...
The paper defines an optimization problem in terms of process controlling and fuzzy method. The authors also studied the performance of their solution. On genetic algorithms for digital quantum simulations, see148. In149, a method for the learning of an unknown transformation via a genetic approach...
Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room T... The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thi...
SOLUTION: A logic circuit includes a source follower circuit and a logic circuit the input portion of which is connected t... K Daisuke,河江 大輔 被引量: 0发表: 2011年 Gate driving circuit and inverter having the same The invention discloses a gate driving circuit and an inverter having ...