Physics Archisman Panigrahi Production And Industrial Engineering Sourabh Patel Statistics Anirban Chakraborty Textile Engineering And Fibre Science Ankit Chaurasiya GATE 2021 Toppers List with Marks Below are the names and marks of GATE toppers CSE, EE, EC, ES, ME, CE, and other subjects. Candidates...
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K. - 《Physica Scripta An International Journal for Experimental & Theoretical Physics》 被引量: 0发表: 2020年 Nanosized Metal-Grain-Granularity Induced Characteristics Fluctuation in Gate-All-Around Si-Nanowire Transistors at 1nm Technology Node As predicted, 5nm technology is not going to be ...
TC Han,HD Zhao,XC Peng - 《Chinese Physics B》 被引量: 0发表: 2019年 Fabrication of high aspect ratio symmetric and asymmetric T-shaped gates for high frequency pseudomorphic HEMTs We have grown by MBE a series of MODFET structures containing In.25Ga.75As channel layers. The channel layer...
Reviews of Modern Physics 83, 33 (2011). Article ADS Google Scholar Quantum Internet Research Group (QIRG), web: https://datatracker.ietf.org/rg/qirg/about/ (2018). Duriez, T., Brunton, S. L. & Noack, B. R. Machine Learning Control: Taming Nonlinear Dynamics and Turbulence, ISSN ...
Nature Physics (2024) Quantum computation of frequency-domain molecular response properties using a three-qubit iToffoli gate Shi-Ning Sun Brian Marinelli Austin J. Minnich npj Quantum Information (2024) Experimental error suppression in Cross-Resonance gates via multi-derivative pulse shaping Boxi...
In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). S... Ali Naderi - 《International Journal of Modern Physics B》 被引量: 0发表: 2017年 Tuning the chemical selectivity of SWNT-FETs for...
The aim of this paper is to improve the understanding of the physical processes responsible for the degradation of GaN-based HEMTs with p-GaN Schottky-gate under forward gate bias. We studied three different wafers having different Mg-doping concentration levels in the p-GaN, which correspond to...
NAND Gate: It is the combination of two basic logic gates, the AND gate and the NOT gate connected in series. The NAND gate and NOR gate can be called the universal gates
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