question paper gate 2018 question paper gate 2017 question paper gate 2016 question paper gate 2015 question paper by subject gate cse question paper gate mechanical question paper civil engineering gate question paper gate ece question paper gate gate application form how to correct gate application ...
paper format of the current academic year higher engineering mathematics by b.s. grewal if you are an undergraduate student, you will find this book to be helpful with gate preparation contains all topics and concepts needed for gate and other competitive exams every chapter covers theory, ...
K.L. and C.Z. provided the chemical vapour deposition-grown graphene samples. T.J., D.H., J.C., J.E.S., Y.-R.S., W.-T.L. and S.W. analysed the data. T.J., D.H., J.E.S., Y.-R.S., W.-T.L. and S.W. wrote the paper with contributions from all authors. ...
Molecular structure-property relationships are key to molecular engineering for materials and drug discovery. The rise of deep learning offers a new viable solution to elucidate the structure-property relationships directly from chemical data. Here we show that the performance of graph convolutional networ...
In this paper, we present an analysis on the charge-retention characteristics of a synaptic TFT with a single layer of the gate oxide. For a low-power consumption, the synaptic TFT is operated in the sub-threshold region with a read voltage less than the threshold voltage. In the fabricated...
This paper provides a comprehensive review of FG memristor devices based on vdW materials. The FG structure has received a lot of attention due to its unique FG layer. In particular, the basic principles of the FG memristor device was provided, the devices were classified into electrical modulati...
The first ionic TE paper based on nanofibrillated cellulose (NFC) and the polyelectrolyte poly(sodium-4-styrene sulfonate) (PSSNa) was developed by Crispin et al. [24] The cellulose solution (PSSNa, glycerol, and DMSO) was homogenously mixed under sonication. The mixture was then drop-casted...
GaSb surfaces treated with ex-situ chemical solution and in situ remote hydrogen plasma are inspected. After a series of etching steps, the GaSb surfaces exhibit smooth topography, indicating that this combination of treatments is capable of realizing ultrathin dielectric deposition...DOI...
NAND Gate: It is the combination of two basic logic gates, the AND gate and the NOT gate connected in series. The NAND gate and NOR gate can be called the universal gates
(k,EF) = 0 reduces to that of freestanding SWNTs providing a single solution. On the contrary, Eq. 1 withr(k,EF) ≠ 0 yields double solutions exhibiting the plasmon hybridization in the mixed-dimensional heterostructure as shown in Fig.3a(red and green lines). Theoretically ...