Department of Physics, State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (MOE), Fudan University, Shanghai, China Ying Xu, You-Bo Ma, Feng Gu, Shan-Shan Yang & Chuan-Shan Tian Contributions Y.X. and C.-S.T. devised the project. Y.X., ...
Machine learning–based solutions have been applied successfully in academic and industrial studies as well as technology and marketing applications24,115,116,117. This has been possible mainly because the large amounts of data required by machine learning methods are now available due to the ...
被引量: 608发表: 2008年 Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs A one-dimensional (1-D) analytic solution is derived for an undoped (or lightly doped) double-gate (DG) MOSFET by incorporating only the mobile charge term... Taur,Y. - 《...
It is known that solutions like sulfur ammonia or HCl can remove the native oxide layer of InAs. However, we observed that wet etching could bring down the vertical NWs at this step through the surface tension of liquid. Therefore, we did not remove the native oxide layer by wet etching ...
“… the laws of physics present no barrier to reducing the size of computers until bits are the size of atoms, and quantum behavior holds sway.” Richard P. Feynman (1985) This guide is intended for researchers entering the area of Quantum Computation and Quantum Information Science. OVERVIEW...
Q-CTRLdeveloped two distinct approaches for the task: closed-loop automated “black box” optimization and reinforcement learning. They differ in subtle ways but both involve allowing an autonomous agent to test new strategies and discover solutions which give the best quantum logic gates. ...
The method makes use of the solutions to the dual of a set of inequalities to guide the design. The procedure is suitable for a variety of network topologies, for multiple output networks, and for partially specified functions. The procedures described are suited to automatic computation. A ...
Today's MOSFET has evolved through many modifications to provide solutions for parasitic problems that emerge during scaling. A modern n-channel MOSFET structure is shown in Figure 3.18. The gate dielectric is SiO2 and is grown by thermal oxidation. As a result of continued scaling, the gate ox...
Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization. In Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 1–5 December...
5 Solid solutions versus superlattice structure: role of annealing temperature. a, Schematic of HfO2–ZrO2 multilayer and Hf:ZrO2 solid-solution films. Under a high-temperature anneal, the multilayer structure transitions towards a Hf:ZrO2 solid-solution-like structure demonstrating more FE-like ...