Gas cluster ion beam The Thermo Scientific MAGCIS™ dual mode ion source enables depth profiling analysis and surface cleaning of both soft and hard materials on the same XPS instrument. Switching between gas cluster sputtering and monatomic sputtering is handled completely by Avantage software, and...
Gas-cluster ion-beam (GCIB) processing of surfaces provides individual atoms within an accelerated gas cluster (1,500 atoms per cluster), an energy approximately equal to the individual bond energy of the target surface atoms. The gas-cluster beam is thus capable of providing smoothing and ...
Depth profiling with monatomic and gas cluster ion beam Devices are not usually based around one type of material, but may be a mixture of organic and inorganic compounds. One example, shown here, is the analysis of an organic FET showing both monatomic and gas cluster ion etching. ...
Gas Cluster Ion Beams (GCIB) is a new technology for nano-scale modification of surfaces. It can smooth a wide variety of surface material types to within an angstrom of roughness without subsurface damage. It is also used to chemically alter surfaces through infusion or deposition. Process Usi...
30 keV and 200 keV gas cluster ion beam equipments have been developed for industrial applications. A gas cluster source with a non-cooled nozzle was used for both the equipments. Sufficient monomer ion suppression was achieved by using an E 脳 B filter and chromatic lenses mass filter with ...
aCarburation of silicon surfaces by a gas cluster ion beam, notably for the preparation of such surfaces for the integration of micro-electronic and opto-electronic devices by epitaxy 硅表面的渗碳由气体群离子束,著名地为准备的这样表面为微电子学和光电子设备的综合化由外延[translate]...
Gas cluster ion beam (GCIB) processing has recently been introduced as a commercial tool for processing 'rough' surfaces, such as polished substrates or thin films. The physical interaction of a gas cluster ion beam with a surface is strikingly different from that of better-known 'monomer' ion...
A low energy ion beam of a few hundred eV would be difficult to produce with significant intensity, however, due to the space charge effect encountered from the increase in density of the ions produced ("beam blow-up"). The use of a gas cluster ion beam (GCIB) process, however, has ...
Ionizer for gas cluster ion beam formation 专利名称:Ionizer for gas cluster ion beam formation 发明人:Jerald P. Dykstra 申请号:US09733211 申请日:20001208 公开号:US06629508B2 公开日:20031007 专利内容由知识产权出版社提供 专利附图:摘要:A neutral beam ionizing apparatus for electron impact ...
The temperature dependence of the ripples formation on a copper surface under off-normal gas cluster ion beam irradiation was investigated. At room temperature, well developed asymmetric ripples perpendicular to the beam were obtained with “droplets” of copper at the crests. At elevated temperatures...