We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~25 cm2 and Ni ohmic contacts for p-doped GaN with Rc ~42cm2 were formed. Both types of contacts were used as masks for GaN reactive ion ...
Hashizume, "Cur- rent stability in multi-mesa-channel AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 2997-3004, Oct. 2013, doi: 10.1109/TED.2013.2266663.K. Ohi and T. Hashizume, "Reduction of current collapse in the multi- mesa-channel AlGaN/GaN HEMT," Phys...
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et al.Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs. Physica Status Solidi (c) . 2007Lee SJ, Lee J, Kim S, Jeon H (2007) Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs. Phys Stat ...
Effect of BCl 3 concentration and process pressure on the GaN mesa sidewalls in BCl 3 /Cl 2 based inductively coupled plasma etching[J] . D.S. Rawal,B.K. Sehgal,R. Muralidharan,H.K. Malik,Amitava Dasgupta.Vacuum . 2012 (12)
The excessive gate leakage current of the planar- and mesa-type InAlN/GaN heterostructure field-effect transistors (HFETs) is evaluated. It is found that the gate current of the mesa-type HFETs is higher than that of the planar devices, particularly at low biases. Analyses of the gate ...
Heavily Si-doped Al x Ga 1– x N mesastrip structures were grown by selective MOVPE technology. Al x Ga 1– x N:Si mesastructures with x ~ 0.01–0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesa...
In this study, ArF laser activation annealing of an Mg-doped GaN four-point probe small mesa device is investigated. Fabricated mesa device has 2-渭m-high small mesa structures with In/Au contacts formed using standard semiconductor device process. In our setup, the ArF excimer laser was ...
MesaStructureOptoelectronicPropertiesGaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows ...
A vertical-type mesa-gate GaN metal-oxide semiconductor field-effect transistor (MOSFET) has been fabricated. The mesa-gate structure can be easily achieved by a single deep etch to the n+-GaN which is the drain of the device, whereas the trench-gate structure, the commonly used structure ...