GAN039-650NTB - The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies
GAN039-650NTB 概述 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageDevelopment GAN039-650NTB 数据手册 通过下载GAN039-650NTB数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。 PDF下载 GAN039-650NTB 650 V, 33 mOhm ...