GaN-based power device technology is progressing rapidly and expanding its applicability in a wide range of power applications including Solar Inverters. Along with intrinsic scalability in low and high voltage power conversion topologies and coupled with dramatic FOM improvement vs. Si based devices,...
This article highlights InRel-NPower exploration of the latest GaN, AlGaN, and AlN semiconductor materials for power electronics applications.
This paper presents the development of microwave Gallium nitride(GaN) heterostructure field-effect transistors (HFETs) on silicon (Si).GaN-on-Si provides a low-cost manufacturable platformthat could lead to the commercialization of GaN-based power devicesfor wireless applications. Small periphery GaN ...
Infineon provides a variety of innovative power semiconductors addressing a broad range of battery powered motor control applications, such as power tools, forklifts, all kinds of light electric vehicles including e-skateboards, e-scooters, pedelecs, low speed cars and many others. Through a...
Over the last few years, GaN-based transistors with p-GaN gate have been proposed as a promising normally-off devices for use in power electronics. A high robustness toward the off-state has already been demonstrated [1], [2], along with an almost complete suppression of current collapse [...
Advanced Energy Materials (Tiwari/Advanced) || Radiation Damage in GaN-Based Materials and Devices Due to the comprehensive performance advantages,GaN-based power devices are more suitable for the future development needs of RF power amplifier modules in... A Tiwari,S Valyukh 被引量: 0发表: 20...
Gallium nitride (GaN) based power electronics devices are actively being evaluated to determine if their theoretical advantages over silicon (Si) based swi... MJ Scott,L Fu,Z Xuan,... - 《Semiconductor Science & Technology》 被引量: 12发表: 2013年 InGaAlP and InGaN light-emitting diodes: hi...
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COVER STORY Bringing GaN on Si Based Power Devices to Market The Status of the GaNpowIR™ platform at International Rectifier The availability of new power electronics based on commercially viable wide band gap semiconductors such as GaN on silicon power devices fabricated in silicon foundries, ...
dual-mode wireless charging solution at CES,” comments Neil Ganz, CEO & chairman of PowerSphyr. “GaN Systems is also a critical component across our entire suite of wireless charging solutions, allowing us to remove limitations of distance and wirelessly charge power hungry devices up to 500W...