Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundarydoi:10.1107/s160057671801350xHwa Seob KimHyunkyu LeeDongsoo JangDonghoi KimChinkyo KimInternational Union of Crystallography (IUCr)...
micromachines Review Vertical GaN MOSFET Power Devices Catherine Langpoklakpam 1, An-Chen Liu 1, Yi-Kai Hsiao 2, Chun-Hsiung Lin 3 and Hao-Chung Kuo 1,* 1 Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming ...