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09 December 2015 Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures Young Joon Hong1,*, Chul-Ho Lee2,*, Jinkyoung Yoo3,Yong-Jin Kim4, Junseok Jeong1, Miyoung Kim5 & Gyu-Chul Yi4 Integration of nanostructure ...
C. Lee, S. Y. Hyun, S. I. Ahn, K. W. Kim, H. I. Cho, J. B. Ha, and J. H. Lee, “Interface Characterization of ALD Deposited Al2O3 on GaN by CV Method,” Phys. Status Solidi C-Curr. Top. Solid-state Phys., vol. 5, no. 6, pp. 1992-1994, 2008....
shift profiling, discharging-based trap energy profile technique, etc., the frequency-dependent CV method for border trap density extraction for AlGaN/GaN heterostructure is not present18,19,20. We further performed low-frequency (1/f) noise measurements as they are a highly powerful tool for ana...
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Chemically Clean Decomposition of Et2Ga(N3)·MeHNNH2doi:10.1002/1521-3862(20020304)8:2<50::AID-CVDE50>3.0.CO;2-2Chemicalvapordeposition(CVD)GalliumnitrideSingleprecursorThinfilmsM.ThinM.ThinSungThinC.ThinKimThinS.ThinH.ThinYooThinC.ThinG.ThinWileyChemical Vapor Deposition...
Luo, B.; Mehandru, R.; Kim, J.; Ren, F.; Gila, B.P.; Onstine, A.H.; Abernathy, C.R.; Pearton, S.J.; Gotthold, D.; Birkhahn, R.; et al. High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Electron. ...
32. Yong, C.; Yugang, Z.; Chen, K.J.; Lau, K.M. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Device Lett. 2005, 26, 435–437. [CrossRef] 33. Saito, W.; Takada, Y.; Kuraguchi, M.; Tsuda, K.; Omura, I. Recessed-...
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