The effect of initial growth process including GaSb or stepped buffers is also described. On bulk Ga 0.6 In 0.4 Sb layer grown with a stepped buffer layer, the best carrier density and mobility are 1.4 × 10 16 cm −3 and 454 cm 2 V −1 s −1 , respectively. But the lower ...
Harrison, a two-way audio communication system is described for the prevention of acoustical feedback between a speaker and a microphone at each of a pair of stations. The system of the aforesaid Harrison patent provides between two stations two communication channels. In the first communication ...
Transducin is activated to G* at a constant rate, denoted νG, and G* in turn activates PDE at a rate that we denote as νE in terms of PDE* subunits (solid trace). The cGMP concentration and the circulating electrical current decline from their respective dark levels along trajectories ...
Each reference zone includes plural cells having magnetic flux transitions which cause the head to derive a pair of opposite polarity pulses as the cells move longitudinally relative to the head. The pulse amplitude is a function of (a) the distance separating the head from the disc, (b) the...
Four samples: Nb:STO sub- strate, MgO (100 nm)/Nb:STO, Ga2O3 (200 nm)/MgO (25 nm)/Nb:STO, and ultrathin Ga2O3 (3 nm)/MgO (2 nm)/Nb:STO were fabricated using the same growth condition described in the "Film growth and device fabrication" section. Kraut's method was employed...
Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light am
An automatic gain control system incorporating a novel amplifier of controllable gain is described. The amplifier is d.c. coupled throughout and capable of wideband operation. It employs a cascoded differential transistor amplifier for producing the principal voltage gain supplemented by input and outpu...
The rightmost term in equation (2) expresses the homogeneous saturation of the gain. When the signal power P reaches the saturation power Psat, the gain reduces to half of the small signal gain g0. The small signal gain factor g0 is related to the pump power Pp as described by the follo...
An alternative approach to a gain of +1 buffer is described in the Wideband Unity Gain Buffers section of this data sheet. +5V 50Ω Source VI 50Ω + 0.1µF 6.8µF OPA693 RF 300Ω DIS 50Ω VO 50Ω Load RG 300Ω Open −5V 0.1µF 6.8µF + Figure 2. DC-...
The usable voltage range for the VOCM input is specified in the Electrical Characteristics and must be observed. The output stage can be set to a gain of 1 V/V and 1⅜ V/V. THe output stage is set to 1 V/V after a device reset or power-on, and is controlled by the gain ...