The exciton binding energy increases with the decrease in the dimension of V-QWRs, to a peak value at a small width of V-QWRs and then decreases. The dependence of exciton binding energy on the curvatures of V-QWRs is different for different exciton transitions....
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results,...
Abstract The energy of a biexciton in a GaAs–Al x Ga 1−x As quantum well is calculated variationally by use of a two-parameter trial wave function. The calculated binding energy, relative to two well-separated excitons, is greater than that given previously by Kleinman [Phys. Rev. B...
The X absorption peaks are identified from the observation of a clear threshold in PLE at 蠅 (36.4 meV) above the heavy hole exciton peak. The intensity of X is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) ...
exciton (the width of exciton absorption peak) in the saturable absorber determines the pulse width of mode locked laser. The exciton binding energy of InP system is higher than that of InGaAs/GaAs, and the latter is higher than that of GaAs/AlGaAs27. The exciton absorption peak shift toward...
Some of them used photoluminescence spectroscopy [43,44] to measure the temperature dependence even though the presence of strongly localized states has been shown to dominate the emission spectra at low temperature and therefore compromise the identification of the free exciton line shape, if present...
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results...
For comparison, we calculate the binding energy of EHL for type-I (GaAs)<SUB>m</SUB>/(AlAs)<SUB>m</SUB> (14≤m≤20) QWs. It is demonstrated that the EHL in type-II GaAs/AlAs QWs is more stable state than exciton and biexciton at high excitation density, while the EHL is ...
The results of excitation spectroscopy measurements of GaAs quantum wells in a magnetic field are explained with the calculated Landau levels for the holes and the electrons and with excitonic effects. The binding energy of the exciton as a function of the well thickness is obtained from this ...
The features of the electron energy spectrum in eccentric two-dimensional GaAs-AlGaAs quantum rings of circular shape are theoretically investigated taking into account the effect of externally applied magnetic and intense laser fields. Analytical expressions for the laser-dressed confining potential in thi...