light-hole excitonGaAs filmThe binding energy and effective mass of a polaron in a GaAs film deposited on the Al0.3Ga0.7As substrate are studied theoretically by using the fractional-dimensional space approach. Our calculations show that the polaron binding energy and mass shift decrease monotonously...
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results,...
The binding energy of an exciton bound to a neutral donor (D0,X) in a GaAs-AlxGa1-xAs quantum well is calculated variationally by using a two-parameter wave function. There is no artificial parameter added in our calculation. Our results agree fairly well with previous experimental results...
The X absorption peaks are identified from the observation of a clear threshold in PLE at 蠅 (36.4 meV) above the heavy hole exciton peak. The intensity of X is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) ...
exciton (the width of exciton absorption peak) in the saturable absorber determines the pulse width of mode locked laser. The exciton binding energy of InP system is higher than that of InGaAs/GaAs, and the latter is higher than that of GaAs/AlGaAs27. The exciton absorption peak shift toward...
The results of excitation spectroscopy measurements of GaAs quantum wells in a magnetic field are explained with the calculated Landau levels for the holes and the electrons and with excitonic effects. The binding energy of the exciton as a function of the well thickness is obtained from this ...
Abstract The energy of a biexciton in a GaAs–Al x Ga 1−x As quantum well is calculated variationally by use of a two-parameter trial wave function. The calculated binding energy, relative to two well-separated excitons, is greater than that given previously by Kleinman [Phys. Rev. B...
For comparison, we calculate the binding energy of EHL for type-I (GaAs)<SUB>m</SUB>/(AlAs)<SUB>m</SUB> (14≤m≤20) QWs. It is demonstrated that the EHL in type-II GaAs/AlAs QWs is more stable state than exciton and biexciton at high excitation density, while the EHL is ...
Some of them used photoluminescence spectroscopy [43,44] to measure the temperature dependence even though the presence of strongly localized states has been shown to dominate the emission spectra at low temperature and therefore compromise the identification of the free exciton line shape, if present...
The biexciton states in InxGa1-xAs quantum wells of varying widths have been studied by spectrally resolved and time-integrated four-wave mixing in magnetic fields up to B = 8 T. Surprisingly, the biexciton binding energy is found to be independent of the field strength. These results challe...