JORISCH W.Fundamentals of vacuum technology[M].Cologne:Wiley-VCH Verlag GmbH&CO.KGa A,1998:10-124.Umrath, Walter. "Vacuum Physics." In Fundamentals of Vacuum Technology:W. Umrath (ed.), H. Adam, A. Bolz, H. Boy, H. Dohmen, K. Gogol, W. Jorisch, W. Monning, H. Mundinger, ...
基础真空技术外国文献Fundamentals of Vacuum Technology
I. Beilis, "Theoretical modeling of cathode spot phenomena," in Handbook of Vacuum Arc Science and Technology: Fundamentals and Applications (R. L. Boxman, D. M. Sanders, and P. J. Martin, eds.), pp. 208--256, Park Ridge,... I Beilis - 《Handbook of Vacuum Arc Science & Technolog...
Early systems incorporated“vacuumtubes,” amplifying devices that operated with the flow of electrons between plates in a vacuumchamber. However, the finite lifetime and the large size of vacuum tubes motivated researchersto seek an electronic device with better properties.The first transistor was ...
- 《Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures》 被引量: 37发表: 1996年 Modeling of the effect of the buried Si – SiO 2 interface on transient enhanced boron diffusion in silicon on insulator The effect of the buried Si – SiO 2 interface on the ...
Recent work on ion−implanted metals has demonstrated the existence of substantial changes in friction and wear properties brought about by ion implantat... NEW Hartley - 《Journal of Vacuum Science & Technology》 被引量: 87发表: 1975年 加载更多研究点推荐 Radiation Materials Science ...
These advancements owe their allegiance to enhancements in the performance of power devices that regulate the flow of electricity. After the displacement of vacuum tubes by solid state devices in the 1950s, the industry relied upon silicon bipolar devices, such as bipolar power transistors and ...
Some visionaries have ideas too far ahead of their time to be practical. Dick Tracy's wrist watch, with its two-way radio capability, could not be made when his comic strip was popular €" the vacuum tubes would have been a bit big. Now, one can purchase a watch with both video and...
In this section, the principles for the formation of a rectifying contact between a metal and an N-type semiconductor region are described. This enables relating the Schottky barrier height between the metal and the semiconductor to their fundamental properties. Vacuum Vacuum φM φS χS EC EFS...
Vacuum tube based. 2 Second Generation The period of second generation: 1959-1965. Transistor based. 3 Third Generation The period of third generation: 1965-1971. Integrated Circuit based. 4 Fourth Generation The period of fourth generation: 1971-1980. VLSI microprocessor based. 5 Fifth ...