H. Watanabe, and T. Hosoi, "Fundamental Aspects of Silicon Carbide oxidation", in Physics and Technology of Silicon Carbide, InTech, pp. 235-250, 2013.Watanabe H, Hosoi T. Fundamental aspects of silicon carbide ...
Fundamental Aspects of Silicon Carbide Oxidation Figure 1. Synchrotron XPS spectra taken from the cleaned and oxidized 4H-SiC(0001) surfaces; (a) change in Si 2p core-level spectra as dry oxidation progresses, (b) peak deconvolution with 2p3/2 and 2p1/2 components, (c) result of curve ....
Silicate-bonded silicon carbide refractories have been prepared by reaction bonding. Mullite or sillimanite was used for bonding of silicon carbide. The pe... N.Kishan Reddy - 《Materials Letters》 被引量: 57发表: 2001年 A Mechanism for Phosphate Hardening and Prospects for the Use of Metal Ph...
D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84–87 (2011). Article ADS Google Scholar Yang, K. et al. Coherent spin manipulation of individual atoms on a surface. Science 366, 509–512 (2019). Article ADS Google Scholar Forrester, P. R....
Fundamental Properties of Wide Bandgap Semiconductors CAS ArticleCAS CAS
F. Graphene-based nanomaterial: the state-of-the-art material for cutting edge desalination technology. Desalination 356, 115–128 (2015). CAS Google Scholar Yampolskii, Y. Polymeric gas separation membranes. Macromolecules 45, 3298–3311 (2012). CAS Google Scholar Robeson, L. M. The ...
Thus, the parametric design method is clarified for the power supply, including a low-pass filter to match the output, the impedance of the power supply with the characteristic impedance of the transmission line. In addition, the effects on the rectifiers of silicon carbide and gallium nitride ...
会议名称:Fundamental aspects of ultrathin dielectrics on si-based devices 1997年 7. 【6h】 LOW TEMPERATURE ULTRATHIN DIELECTRICS ON SILICON AND SILICON CARBIDE SURFACES: FROM THE ATOMIC SCALE TO INTERFACE FORMATION 包量 机译 硅和碳化硅表面上的低温超薄介电体:从原子尺度到界面形成 作者:PATRICK ...
Fundamental Studies of EDM Characteristics of Single Crystal Silicon CarbideIn the manufacturing process of SiC wafers, wire electrical discharge machining (EDM) method is considered better than mechanical saw methods because of its high speed and high machined surface quality. But mass production and ...
Recent results on the fundamental performance of a hot-pressed silicon carbide impacted by sub-scale long-pod penetrators. La Salvia J C,Leavy B,Miller H T,et al. Advances in Ceramic Armor IV:Ceramic Engineering and Science Proceedings . 2009...