PROBLEM TO BE SOLVED: To provide a junction field-effect transistor and a manufacturing method thereof, that can achieve low on-resistance, high maximum drain current, lineality with high transmitting gain, and a shorter gate, without the need for two kinds of positive and negative power ...
1. A field effect transistor comprising spaced apart source and drain regions of one conductivity type within a semiconductive body of the other conductivity type, an insulating layer overlying said body, a metallic gate layer overlying said insulating layer, and at least one of said overlying laye...
field-effect transistor with noise-equivalent power of ~3 × 10−15 W/Hz1/2 and with response time within milliseconds at room temperature, where the Au oxide on Au electrodes modulates the contact resistance because of the light-assisted relaxation of the trapped charge at the contact...
The Double gate (DG) silicon on insulator (SOI) metal oxide field effect transistor (MOSFET) is the leading contender for sub 100nm devices. This paper presents a systematic study of effect of work function of metal gates on symmetric double-gate (DG) MOSFET. Two-dimensional simulation tools...
30 March 2017 Work Function Tuning in Two- Dimensional MoS2 Field-Effect- Transistors with Graphene and Titanium Source-Drain Contacts Seung Su Baik1, Seongil Im2 & Hyoung Joon Choi2,3 Based on the first principles calculation, we investigate the electronic band structures of graphene...
Solution processed vanadium pentoxide as charge injection layer in polymer field-effect transistor with Mo electrodes Kelvin probe measurements reveal that the work function of the Mo electrodes progressively changed from 4.4 to 4.9eV. With the insertion of the V2O5layer,... DX Long,Y Xu,SJ Kang...
This paper reports a new configuration of tunnel field-effect transistor (TFET) for improving the current drivability of device, reduced threshold voltage, suppress ambipolar behaviour and better high-frequency response of the device. For this, a P+-I-N+ type structure has been considered, and ...
An investigation of the work function of metal gate electrodes for advanced CMOS applications Scaling the gate length and oxide thickness of the metal oxide semiconductor field effect transistor (MOSFET) offers great potential to improve device performance and circuit density. The use of metals for th...
Hot Carrier Relief of Metal Oxide Semiconductor Field Effect Transistor by Using Work-Function Engineering A detailed analysis of hot-carrier-degraded NMOS and PROS devices with either nor pgates is presented. For this analysis, we utilized a new simulation tool... U Schwalke,W H?Nsch,A Lill...
Disclosed herein is a field effect transistor (FET), device including a FET, and a method of making the same. In embodiments of the disclosure, a semiconductor-on-insulator (SOI) substrate is provided. The SOI substrate includes a body having a first conductivity type formed in the semiconduct...