型号FP1189-G 制造商Qorvo 描述0.5 W GaAs HFET 频率50 - 4000 MHz 供电电压8 V 电流125 mA 增益19 dB 功率(W)0.501 W 类似商品 TGF2960-SD 晶体管 Qorvo TGF2960-SD 晶体管 Triquint FP1189-G 晶体管 Triquint FP31QF-F 晶体管 Qorvo TGF2961-SD ...
Qorvo's FP1189-G is a high performance 0.5 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1 dB compression, whi...
类似零件编号 - FP1189-G 制造商部件名数据表功能描述 WJ Communication. Inc.FP1189-G 517Kb/12P1/2 - Watt HFET More results 类似说明 - FP1189-G 制造商部件名数据表功能描述 List of Unclassifed Man...FP1189 394Kb/10PHigh Performance 쩍-Watt HFET(Heterostructure FET) ...
WJ FP1189-G SOT89 21+价格 ¥ 0.00 起订数 1个起批 发货地 广东深圳 咨询底价 产品服务 热门商品 FAIRCHILD 场效应管 FDD3672 MOSFET 100V 44a .28 Ohms/VGS=1V ¥ 0.00 TE 2-2310537-5 DIP 21+ ¥ 0.00 HK32F030MF4P6 TSSOP-20 21+ ¥ 0.00 VISHAY 场效应管 SI1016CX-T1-GE3...