Memory cell and method for forming the samedoi:US6797573 B2USUS6797573 Aug 18, 2003 Sep 28, 2004 Micron Technology, Inc. Memory cell and method for forming the same
in the non-volatile memory device Preparation method comprising embedding, after the formation of the second trench of the trench, and a lower depth than the first trench of a first depth in the silicon substrate and the oxide film; Further comprising: after the planarizing the oxide film by...
Method of forming memory cell Ferroelectric memory and methods of forming the same are provided. An example memory cell can include a buried recessed access device (BRAD) formed in a substrate and a ferroelectric capacitor formed on the BRAD. チャヴァン,アショニタ エー.,カルデローニ,アレ...
专利名称：MEMORY CIRCUIT AND METHOD OF FORMING THE SAME USING REDUCED MASK STEPS 发明人：Krishnakumar Mani 申请号：US14264914 申请日：20140429 公开号：US20140284739A1 公开日：20140925 专利内容由知识产权出版社提供 专利附图：摘要：Disclosed is a memory circuit and method of forming the same. The ...
A memory circuit includes first and second amplifier stages that are respectively located within first and second regions of a semiconductor structure, and a memory array that is also located in the semiconductor structure. The memory circuit also includes a first set of digit lines that is coupled...
A non-volatile memory device including a barrier spacer that serves to protect a control gate, including a metal layer, from damage that may result from exposure to a cleaning solution and/or oxygen. With the barrier spacer layer, a cleaning process using a high-power cleaning solution may be...
An NVM(non-volatile memory) device is provided to reduce an overlap area between adjacent floating gates by including a flat part and a pair of walls extending upward from both edges of the flat part. An isolation layer is formed in a substrate(100) to define an active region. A floating...
Beamformer and group statistical analyses revealed that the significant ERSs in the high gamma band were localized in the left MFG (BA 46). In a previous study, activity in the left MFG reflected working memory processes related to explicit memory retrieval30. A repetitive transcranial magnetic ...
In [109], the RSRP reported by the UE is used to feed an ML-assisted beam change prediction scheme based on Long Short-Term Memory (LSTM) and helps saving more than half the power used by the UE for Beam Management (BM) compared to other methods. ML’s versatility is highlighted by ...
United States Application US20200168618 Note: If you have problems viewing the PDF, please make sure you have the latest version of Adobe Acrobat. Back to full textHome Search Services Contact us © 2004-2024 FreePatentsOnline.com. All rights reserved. Privacy Policy & Terms of Use....