pressing and heating at the time of joining to Al electrodes of semiconductor elements, and thus to thermally compression-bond the material for the metallic projection to a fresh Al materal, while an oxide film on the Al electrode of the element is removed according to the plastic deformation....
PURPOSE:To interpose a good insulating film between adjacent wirings and to prevent shorting due to a hillock, by forming metallic wirings so as to bury metals in grooves which are formed on an insulating film. CONSTITUTION:A PSG film 23 is etched about 1 mum in depth in accordance with ...
Wave formation in explosive bonding is viewed as a special case of the transition from laminar to a turbulent metal flow regime set up along the collision region between two metal interfaces. Employing a novel semicylinder technique developed specifically for this investigation, dynamic parameters of ...
In the present paper, the energies of vacancy relaxation and vacancy formation of the face-centred cubic metals (lead, silver, nikel, copper, and aluminium) are calculated by using the idea of metallic bond and the Morse potential of pure metals.In the calculation of relaxation energy, both ...
Learn the definition of a chemical bond. Discover the three types of chemical bonds, see examples of each, and understand when the different types...
Metal-organic framework (MOF) glasses are an emerging class of glasses which complement traditional inorganic, organic and metallic counterparts due to their hybrid nature. Although a few zeolitic imidazolate frameworks have been made into glasses, how to melt and quench the largest subclass of MOFs...
Concurrently and subsequently, complex reaction mechanisms at the interfaces and within the base and filler domains often lead to the formation of intermetallics and associated chemical reaction products. A typical joint is presented in Fig. 3.6. In this example, a bond has formed between the ...
FORMATION OF GOLD TERMINAL PART 优质文献 相似文献Formation and manipulation of a metallic wire of single gold atoms The continuing miniaturization of microelectronics raises the prospect of nanometre-scale devices with mechanical and electrical properties that are qualit... AI Yanson,GR Bollinger,HEVD ...
1.75?eV, indicating that most of the O impurity will distribute in the NiAl GB thermodynamically. Moreover, O is shown to prefer occupying the interstitial sites rather than the substitutional sites in the GB according to the calculated formation energies. The O–Al bond is energetically ...
PURPOSE:To assure the bonding property of a ball and the neck strength by a method wherein a metallic wire as minus and a discharge electrode as plus are impressed with high voltage in inert gas atmosphere, setting up the discharge current at that time to be low-level current in the forme...