Energy band gapNitrogen doped amorphous Ge1-xSix thin films are grown by electron gun technique. Nitrogen atoms on Eg of the a-Ge1-xSix films in the 0 x 1 range are analyzed. Variation in 0 x 1 range shows a warped change of Eg in 1.0 – 3.6 eV range. The change in Eg(x) ...
inner web of the middle toe (足中趾与次趾间之缝隙) 中指内间 piston skirt clearance (活塞侧缘和气缸之间的余隙) 活塞侧缘隙 plastiga(u)ge (测曲轴轴承游隙用的) 塑料线间隙规 phosphorescent paint(能吸收紫外线等辐射) 磷光漆 water jet vacuum (用喷射泵能达到的真空) 水喷真空 boiler fullpower ...
Excited states have been studied in 35Ar following the 16O(24Mg,1alpha1n)35Ar fusion-evaporation reaction at 60 MeV using the Ge-detector array GASP. A com... J Ekman,D Rudolph,C Fahlander,... - 《Physical Review Letters》 被引量: 85发表: 2004年 Symmetry energy and the isospin dep...
When comparing the VDOSs of the fullerene family and graphene, it is observed that the C720fullerene presents most of the features displayed by bulk graphene, with the obvious difference of the finite acoustic gap. However, it is worth highlighting the mismatch located in the range of ~540–91...
Measurement of Forbidden Energy Gap of Semiconductors by Diffuse Reflectance Technique Diffuse reflectance technique for the measurement of forbidden energy gap, E g, is discussed. The energy coordinate of the point at which the linear incre... SP Tandon,JP Gupta - 《Physica Status Solidi》 被引...
The current narrowing layer and both the first and third cladding layers are semiconductors of differing type. The upper surface of the third layer includes a step between the region of the circuit narrowing layer and the region of the gap. The second Bragg reflecting mirror (16) comprises ...
However, in a relaxed state or light sleep, the brain starts producingalphawaves (8-14Hz).Alphawaves can enable one to bridge the gap between one’s consciousness and one’s subconscious. These waves bring about a detached awareness.
A p-i-n photovoltaic cell comprises a back reflector 114, a wideband gap P+ type layer 116, a thick intrinsic layer 118 and an N+ type layer 120 topped with a transparent conductive oxide 122; a grid electrode 124 and an antireflection layer 126. Bandgap reducing elements such as Ge, ...