Davies, S.., Khamsehpour, B., "Focused ion beam machining and deposition for nanofabrication," Vacuum 47(5), 455-462 (1996).S.T. Davis, B. Khamsehpur, "Focused ion-beam machining and deposition for nanofabrication", Vacuum, 47 [5], 455-62 (1996)...
Textile research Focused Ion Beam Nanomachining of Thermoplastic Polymers NORTH CAROLINA STATE UNIVERSITY Dieter P. GriffisC. Maurice Balik WongKa ChunCommercially available Gafocused ion beam (FIB) instruments with nanometer size probe allows for in situ materials removal (sputtering) and addition (...
focused ion beam technologyion-surface impactmicromachiningoptical filmsscanning electron microscopysputter etchingtitanium compoundswear resistant coatings/ focused ion beam machiningFocused ion beam (FIB) systems have become a useful tool in the failure analysis and modification of microelectronic devices ...
focused gallium ion beam machiningMicro-dies for Co-less polycrystalline WC and WC–10wt%Co have been machined by a focused-Ga+-ion beam (30keV and 187pA) and their surfaces investigated by atomic force microscopy. The surface of the Co-less WC micro-die was extremely smooth with a ...
7. A focused ion beam machining apparatus comprising: an ion source; an ion beam control system for accelerating, focusing and deflecting an ion beam emitted from said ion source; a secondary particle detector for detecting secondary particles emitted from a sample by irradiating the ion beam onto...
Focused ion beam machining of silicon carbide Focused ion beam can remove hard materials such as diamond, sapphire, and silicon carbide (SiC). SiC is very useful for glass molding because of high tempe... T Okumoto,K Sawai,J Taniguchi,... 被引量: 0发表: 2009年 Characteristics of silicon...
surface roughness/ nanomachiningNanocrystalline and sub-microcrystalline samples of nickel have been machined by a focused Ga+ ion beam (30keV and 187pA) at doses of 8.92×1016–2.68×1018 ions/cm2 and their surface topography was investigated by atomic force microscopy (AFM). Values of the ...
Cross-sectional processing of wire bonding (Processing size: W: 95 µm, D: 55 µm; Machining time: 20 min) 2. Ultra-Low Damaged TEM Sample Preparation by Low-kV Processing (0.5 kV or higher) and improved Secondary Electron Image Resolution at Low kV ...
The Hitachi MI4050 is the high-performance Focused Ion Beam system. Equipped with new optics, the MI4050 provides world-leading SIM-imaging resolution and high-definition TEM sample preparation by improved imaging resolution at low kV.
Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining. The mechanisms of material removal and associated hardware and software developed for industrial applications of these fascinating electro-physical and chemical machining processes are reviewed...