status = FLASH_WaitForLastOperation(EraseTimeout); if(status == FLASH_COMPLETE)//如果FLASH处于可以操作状态,开始进行页擦除操作 { FLASH->CR|= CR_PER_Set;//设置FLASH_CR寄存器的PER位为1 FLASH->AR = Page_Address;//用FLASH_AR寄存器选择要擦除的页 FLASH->CR|= CR_STRT_Set;//设置FLASH_CR...
STM32的Flash可以用于存储代码,也可以用于存储数据。一般来说我们将代码保存在Flash开始的区域中,余下的部分用来保存数据。 主存储器:一般我们说 STM32 内部 FLASH 的时候,都是指这个主存储器区域它是存储用户应用程序的空间,芯片型号说明中的 1M FLASH、 2M FLASH 都是指这个区域的大小。与其它 FLASH 一样,在写...
I running my zephyr based firmware. Before it is run a boot loader selects the firmware image. This bootloader sets the FLASH_OPTCR register. All sectors are disabled for writing(erasing). usingflash_write_protection_setfunction doesn't fail when enabling writing - but afterflash_erasefails be...
我代码运行启动是使用的STM32f407内部flash,我烧录完程序运行起来后,代码区占内部sector 0-4扇区。我现在需要在程序运行期间在线升级软件。但是我用FLASH_EraseSector函数擦除0-4扇区时,卡死在FLASH_EraseSector函数里,具体问题在:执行FLASH->CR |= FLASH_CR_STRT;这个语句后就卡死。但是我擦除5-11扇区测试都...
1. 确保您的硬件支持较高的擦除速度。检查 SPI Flash 芯片的数据手册，了解其性能指标。2. 检查 SPI...
Describe the bug I am facing a similary problem with my disco_l475_iot1 board which has stm32l475 MCU. I am using mcuboot for updatehub app. I am not able to erase flash memory partition. A clear and concise description of what the bug i...
Hi, I had an earlier thread: [SOLVED] JFlash overwrites incorrect pages where Segger provided a solution using GDB to prevent the J-Link erasing data in the flash that we need to protect. I have the same problem with J-Flash: we use a 2-step programming
I am using MIMXrt1020 evk .I want to erase sector number 593. But whenever I enter in this instruction flexspi_nor_flash_erase_sector(EXAMPLE_FLEXSPI, 593 * SECTOR_SIZE); my controller goes into fault. Please suggest me the solution Tags: flexspi mimxrt1021 nor erase sector erase 0 ...
Problem: sector erase does not work I am a newbie to QSPI flash, jumping from example to example. I still have not understood whether to send 1 or 2 CMD bytes for the erase LUT sequence:- the Micron datasheet suggests there is noe CD byte, and 4 address bytes, and that's it...
When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling...