The array further includes bit-lines each connecting bit-line nodes of flash memory cells in a same column.Yue-Der ChihUSUS7495958 * 2006年11月6日 2009年2月24日 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase methods and structures for byte-alterable flash memory...
The lifetime of the resulting flash memory system is improved because of decreased erase and program stresses in the memory array.doi:US6005810 AKoucheng WuUSUS6005810 1998年8月10日 1999年12月21日 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary ...
MCUs boast up to 14kbyte flash program memory.The article evaluates the PIC16F193X family of microcontrollers, from Microchip Technology Inc.EBSCO_bspElectronics Weekly
A 120 mm/sup 2/ 64 Mb NAND flash memory achieving 180 ns/byte effective program speedRapidly increasing solid-state mass-storage application areas are requiring low cost, high density flash memories with higher read and program throughputs. This paper describes a 3.3 V-only 64 Mb NAND flash ...
Takeuchi, "A 1.0V power supply, 9.5Gbyte/sec write speed, single-cell self-boost program scheme for ferroelectric NAND flash SSD," IEEE Inter. Memory Worshop Proc., pp. 42-45, 2010.K. Miyaji, S. Noda, T. Hatanaka, M. Takahashi, S. Sakai, and K. Takeuchi, A 1.0 V power supply...