The lifetime of the resulting flash memory system is improved because of decreased erase and program stresses in the memory array.doi:US6005810 AKoucheng WuUSUS6005810 1998年8月10日 1999年12月21日 Integrated Silicon
The array further includes bit-lines each connecting bit-line nodes of flash memory cells in a same column.doi:US7495958 B2Yue-Der ChihUSUS7495958 * 2006年11月6日 2009年2月24日 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase methods and structures for byte-alterable flash ...
MCUs boast up to 14kbyte flash program memory.The article evaluates the PIC16F193X family of microcontrollers, from Microchip Technology Inc.EBSCO_bspElectronics Weekly
Takeuchi, "A 1.0V power supply, 9.5Gbyte/sec write speed, single-cell self-boost program scheme for ferroelectric NAND flash SSD," IEEE Inter. Memory Worshop Proc., pp. 42-45, 2010.K. Miyaji, S. Noda, T. Hatanaka, M. Takahashi, S. Sakai, and K. Takeuchi, A 1.0 V power supply...