Flash fast program mode for high definition video recording and high resolution camera burst mode recordingThe present disclosure, in various embodiments, describes technologies and techniques for use by a memory controller or similar device for storing sequential image data or other data streams ...
求翻译:Common flash optional supply voltage for fast program and erase是什么意思?待解决 悬赏分:1 - 离问题结束还有 Common flash optional supply voltage for fast program and erase问题补充:匿名 2013-05-23 12:26:38 常见flash 可选电源电压为快速程序和擦除热门同步练习册答案初中同步测控优化设计答案...
Once you set it, you'll be give the option to store your notes as encrypted files, and even hide the program icon from the system tray when it's locked. Thus, this is probably THE notes program you should have on your flash drive so if your jump drive gets stolen, y...
FLASH FAST PROGRAM MODE FOR HIGH DEFINITION VIDEO RECORDING AND HIGH RESOLUTION CAMERA BURST MODE RECORDINGThe present disclosure, in various embodiments, describes technologies and techniques for use by a memory controller or similar device for storing sequential image data or other data streams ...
Flash memory device capable of overcoming fast program/slow erase phenomenon and erase method thereofAn erase operating time can be shortened and an erase operating characteristic can be improved in a flash memory device. The flash memory device includes a plurality of memory cell blocks, an ...
Serial flash XIP with caching mechanism for fast program execution in embedded systemsA system including a processor, a memory controller, and a flash memory module. The processor is configured to generate a request to retrieve information corresponding to an address. The memory controller module ...
Serial flash XIP with caching mechanism for fast program execution in embedded systemsA system including a processor, a memory controller, and a flash memory module. The processor is configured to generate a request to retrieve information corresponding to an address. The memory controller module ...
A fast low voltage ballistic program, ultra-short channel, ultra-high density, dual-bit multi-level flash memory is described. The structure and operation of this invention is enabled by a twin MONOS cell structure having an ultra-short control gate channel of less than 40 nm, with ballistic...
Fast Formula Not Shown Transients After the Program/Erase of Flash Memory Stacks With High- Formula Not Shown DielectricsToledanoLuque, MDegraeve, RZahid, M. BKaczer, BBlomme, PKittl, J. AJurczak, MVan Houdt, JGroeseneken, GIEEE Transactions on Electron Devices Ed...
Fast $V_{rm TH}$ Transients After the Program/Erase of Flash Memory Stacks With High- $k$ Dielectricsdoi:10.1109/ted.2010.2100821Maria Toledano-LuqueRobin DegraeveMohammed B ZahidBen KaczerPieter BlommeJorge A KittlM JurczakJan Van Houdt