/* USER CODE BEGIN 4 *//*FLASH写入程序*/voidWriteFlashTest(uint32_tL,uint32_tData[],uint32_taddr){uint32_ti=0;/* 1/4解锁FLASH*/HAL_FLASH_Unlock();/* 2/4擦除FLASH*//*初始化FLASH_EraseInitTypeDef*//*擦除方式页擦除FLASH_TYPEERASE_PAGES,块擦除FLASH_TYPEERASE_MASSERASE*//*擦除页...
Failed to unlock FLASH.\n"); return; } // 2/4 初始化擦除结构体并擦除指定页 FLASH_EraseInitTypeDef FlashSet; FlashSet.TypeErase = FLASH_TYPEERASE_PAGES; // 擦除类型:页擦除 FlashSet.Page = Page; // 页索引 FlashSet.NbPages = 1; // 一次擦除 1 页 if (HAL_FLASHEx_Erase(&Flash...
/* USER CODE BEGIN 4 */ /*FLASH写入程序*/ void WriteFlashTest(uint32_t L,uint32_t Data[],uint32_t addr) { uint32_t i=0; /* 1/4解锁FLASH*/ HAL_FLASH_Unlock(); /* 2/4擦除FLASH*/ /*初始化FLASH_EraseInitTypeDef*/ /*擦除方式页擦除FLASH_TYPEERASE_PAGES,块擦除FLASH_TYPEERAS...
FLASH_EraseInitTypeDef FlashSet;FlashSet.TypeErase=FLASH_TYPEERASE_PAGES;FlashSet.PageAddress=addr;FlashSet.NbPages=1;/*设置PageError,调用擦除函数*/uint32_t PageError=0;HAL_FLASHEx_Erase(&FlashSet,&PageError);/* 3/4对FLASH烧写*/for(i=0;i<L;i++){HAL_FLASH_Program(FLASH_TYPEPROGRAM_...
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FlashSet.TypeErase = FLASH_TYPEERASE_PAGES; FlashSet.PageAddress = addr; FlashSet.NbPages =1;/*设置PageError,调用擦除函数*/uint32_tPageError =0; HAL_FLASHEx_Erase(&FlashSet, &PageError);/* 3/4对FLASH烧写*/for(i=0;i<L;i++) ...
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}flash_erase_init_t.TypeErase = FLASH_TYPEERASE_PAGES;flash_erase_init_t.PageAddress = page_addr;flash_erase_init_t.NbPages = page_num;returnHAL_FLASH_Erase(&flash_erase_init_t, &error_page); }/** * @brief flash 读字节 * @note NULL ...
System Clock Frequency Note: With system clock frequencies greater than 25 MHz, the VDD monitor level should be set to the high threshold (VDMLVL = 1b in SFR VDM0CN) to prevent undefined CPU operation. The high threshold should only be used with an external regulator powering VDD directly....
(8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks • Synchronous I/O performance – Up to synchronous timing ...