A wavy FET structure includes a semiconductor substrate having a first conductive type, a source doped region and a drain doped region both having a second conductive type, a gate structure, and first and second metal layers. The semiconductor substrate includes a surface and a fin portion ...
The paralleled TFET and MOSFET dimensions and physical parameters in the PTM-FET structure have optimized somehow that TFET device merits like low SS (<60 mV/dec) and low leakage current dominate in subthreshold region, while at high gate bias the structure benefits from high drain current of ...
Fig. 1: Capacitors in a generic NC-FET structure and its small-signal model. a Capacitors potentially involved in determining the channel potential of a generic NC-FET. CQ, Cdep, Cs/d,geo, and Ctrap are the quantum-, depletion-, s/d geometrical, and trap induced, capacitors, respectively...
A VDMOSFET structure with an additional p-region at the surface of the epitaxial layer is proposed. This structure realizes low reverse transfer capacitance without significantly degrading resistance. Reduction of the reverse transfer capacitance results in an improvement of the switching characteristics. ...
[2] FENG J,HE Z,EN Y,et al.The ESD behavior of enhancement GaN HEMT power device with p-GaN gate structure[C].IEEE International Power Electronics and Application Conference and Exposition(PEAC),2018:1-4. [3] POSTHUMA N E,YOU S,STOFFELS S,et al.Gate architecture design for enhancement...
[2] FENG J,HE Z,EN Y,et al.The ESD behavior of enhancement GaN HEMT power device with p-GaN gate structure[C].IEEE International Power Electronics and Application Conference and Exposition(PEAC),2018:1-4. [3] POSTHUMA N E,YOU S,STOFFELS S,et al.Gate architecture design for enhancement...
FinFET structure 专利名称：FinFET structure 发明人：Hsin-Yun Hsu,Hsiao-Kuan Wei 申请号：US15901992 申请日：20180222 公开号：US11145747B2 公开日：20211012 专利内容由知识产权出版社提供 专利附图：摘要：A semiconductor device structure is provided. The semiconductor device structure includes a substrate ...
There is provided a method for fabricating a FinFET in which a self-limiting reaction is employed to produce a unique and useful structure that may be detectable with simple failure analysis techniques. The structure is an improved vertical fin with a gently sloping base portion that is ...
The SGT structure is formed substantially as a round hole having a lateral expansion extended beyond the trench gate and covered by a dielectric linen layer filled with a trenched gate material. The round hole is formed by an isotropic etch at the bottom of the trenched gate and is ...
novelstructure ; CMOS ! 引言 近二十年以来硅集成电路得到迅速发展,特别是最近几年 内深亚微米 CMOS 技术已经发展到衬底大到 12 寸体硅圆片, 器件特征尺寸小至 0.13 微米的水准,正向亚 100 纳米的技术 水准进军 . 然而研究结果表明:在传统的平面 MOSFET ...