当然还有其他的挑战。Ferroelectric Memory Co.(FMC)公司正在开发FeFET,其首席执行官StefanMüller表示:“对于新兴的存储器技术,最难的部分是要客户确信你的解决方案真实可靠。” 尽管如此,FeFET及其相关技术正在蒸蒸日上,以下是其最新进展: •GlobalFoundries,FMC,NaMLab,Fraunhofer等已经在22纳米FD-SOI工艺中演示了一...
A memory device includes a plurality of memory cells. Each memory cell includes a multi-gate FeFET that has a first source/drain terminal, a second source/drain terminal, and a gate with a plurality of ferroelectric layers configured such that each of the ferroelectric layers has a respective ...
其他电池有两个终端,需要一个额外的选择晶体管,以确保通过一个电池的泄漏不会干扰到另一个电池。这些选择器晶体管通常放置在存储单元旁边,因此占用更多的空间(除了Spin memory正在开发的一种新的垂直选择器)。 另一方面,FeFET单元是一个三端设备,因此它可以是自己的选择器,消除了对附加设备的需要,并允许更紧凑的存...
Tag:FeFET FRAM Turns 68 Perhaps the oldest nonvolatile semiconductor memory type is the ferroelectric memory, which recently celebrated its 68thbirthday. FRAM predates flash memory, EEPROM, and even UV-erasable EPROM. It’s even older than mask ROM, which wasn’t invented until 1967!
电荷的存在(或不存在)会改变晶体管的阈值电压,这种变化称为内存窗口(memory window)。因此,信息被编码在浮栅晶体管的阈值电压中,并通过测量漏极电流来完成读取。存储在隔离栅极中的电荷长时间保持不变,使存储器具有非易失性特性。 图1:浮栅单元的示意图。 20 多年来,浮栅一直是 2D-NAND 的常用方法,尽管其结构...
当然还有其他的挑战。Ferroelectric Memory Co.(FMC)公司正在开发FeFET,其首席执行官StefanMüller表示:“对于新兴的存储器技术,最难的部分是要客户确信你的解决方案真实可靠。” 尽管如此,FeFET及其相关技术正在蒸蒸日上,以下是其进展: GlobalFoundries,FMC,NaMLab,Fraunhofer等已经在22纳米FD-SOI工艺中演示了一种嵌入式...
Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2) thin films show high potential for future embedded nonvolatile memory applications. However, HfO2 films besides their recently discovered ferroelectric behavior are also prone to undesired charge trapping effects. Th...
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated. 铁电场效应晶体管(FFET)存储器能够实现非破坏性读出,是一种比较理想的存储方式,因此从一开始就受到人们极大的关注。
传统冯诺依曼计算架构正面临着“内存墙”(memory wall)的瓶颈,数据需要在计算单元和存储单元之间来回搬运,严重影响系统的速度和功耗,导致其计算能力的提升正在逐渐趋于饱和,越来越无法满足海量数据处理和智能任务需求,因此需要寻求新的计算架构。同时,人脑又是一个非常高效的智能系统,用极低的功耗即可完成复杂的智能计算,...
在仿真时,对于2FeFET-1T的TCAM设计采用SPECTRE软件进行仿真,对于2FeFET-2T的TCAM设计采用SPECTRE软件进行仿真,除了对本发明中的两种设计进行仿真,我们将我们的结果与非专利文献1(K.PagiamtzisandA.Sheikholeslami,“Content-addressablememory(cam)circuitsandarchitectures:Atutorialandsurvey,”JSSC,vol.41,pp.712–727,20...