Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14965pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type ...
Gate Charge (Qg) (Max) @ Vgs standard Input Capacitance (Ciss) (Max) @ Vds standard Frequency standard Current Rating (Amps) standard Noise Figure standard Power - Output standard Voltage - Rated standard Drive Voltage (Max Rds On, Min Rds On) standard Vgs (Max) standard IGBT Type standard...
Gate Charge (Qg) (Max) @ Vgs 241 nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 10380 pF @ 15 V FET Feature - Power Dissipation (Max) 2.5W (Ta), 73W (Tc) Operating Temperature -55°C ~ 150°C (TJ) ...
Low Miller charge Optimized efficiency at high frequencies UIS Capability (single pulse and repetitive pulse) 技术规格 通道类型 N通道 电流, Id 连续 27A 晶体管封装类型 Power 56 Rds(on)测试电压 10V 功率耗散 78W 工作温度最高值 150°C 合规 - SVHC(高度关注物质) No SVHC (23-Jan...
Reverse Recovery Charge 16.8 22 Notes: 4: Themaximum value is specified by design at T= 175°C.Product is not tested to this condition in production. J www.onsemi.com 2 Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 20
The FDMS86101 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small ...
QgdGatetoDrain“Miller”Charge2.1nC Drain-SourceDiodeCharacteristics VGS=0V,IS=2.1A(Note2)0.71.2V VSDSourcetoDrainDiodeForwardVoltage VGS=0V,IS=12A0.81.2V trrReverseRecoveryTime2947ns IF=12A,di/dt=100A/µs QrrReverseRecoveryCharge1425nC ...
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 905pF @ 75V FET Feature - Power Dissipation (Max) 2.5W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6...
Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor...
Gate Charge (Qg) (Max) @ Vgs 1 Input Capacitance (Ciss) (Max) @ Vds 1 Frequency 1 Current Rating (Amps) 1 Noise Figure 1 Power - Output 1 Voltage - Rated 1 Drive Voltage (Max Rds On, Min Rds On) 1 Vgs (Max) 1 IGBT Type 1 Configuration Single Vce(on) (Max) @ Vge, Ic ...