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芯片制造商：Fairchild Semiconductor Corporation 产品：IGBT电 IGBT FMG2G300US60E FMG2G300US60E Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control,...
必应词典为您提供fairchild-semiconductor-corporation的释义,网络释义: 美国飞兆半导体公司;美国快捷半导体;神童半导体公司;
Publication Date: 03/10/1987 Filing Date: 02/22/1985 Export Citation: Click for automatic bibliography generation Assignee: Fairchild Semiconductor Corporation Primary Class: 326/56 Other Classes: 326/19, 326/90, 326/91 International Classes: ...
Publication Date: 12/13/1988 Filing Date: 11/13/1986 Export Citation: Click for automatic bibliography generation Assignee: Fairchild Semiconductor Corporation Primary Class: 326/32 Other Classes: 326/56, 326/89, 326/90, 361/101 International Classes: ...
Fairchild Semiconductor Corporation Primary Class: 257/751 Other Classes: 228/121, 228/123.1, 228/124.1, 257/753, 257/763, 257/782, 257/E21.505, 257/E21.51, 257/E21.514, 257/E23.017, 257/E23.023 International Classes: H01L21/52;H01L21/58;H01L21/60;H01L23/482;H01L23/488; (IPC1-...
Publication Date: 08/19/2014 Filing Date: 08/07/2013 Export Citation: Click for automatic bibliography generation Assignee: Fairchild Semiconductor Corporation Primary Class: 327/170 Other Classes: 327/108, 327/175, 327/389 International Classes: ...
(or combination of such dopants) can be used in the semiconductor devices. As well, although the devices of the invention are described with reference to a particular type of conductivity (P or N), the devices can be configured with a combination of the same type of dopant or can be ...
A semiconductor device, such as a LDMOS device, comprising: a semiconductor substrate; a drain region in the semiconductor substrate; a source region in the semiconductor substrate laterally spaced from the drain region; and a drift region in the semiconductor substrate between the drain region and...
A field effect transistor includes a semiconductor region of a first conductivity type having an upper surface and a lower surface, the lower surface of the semiconductor region ext