Freitas Jr., Fabrication and characterization of GaN FETs. Solid State Electron. 41 , 1549–1554 (1997) ADSS. C. Binari, W. Kruppa, H. B. Dietrich, G. Kelner, A. E. Wickenden, and J. A. Freitas, Jr., "Fabrication and characterization of GaN FETs," Solid State Electron., vol....
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations Several types of poly-Si nanowire (NW) thin-film transistors (TFTs) with multiple-gated (MG) configuration were demonstrated and characterized. These ...
Various factors, such as VEGFs, PDGFs, FGFs, TGFs, and EGFs, maintaining bioactivity of incorporated molecules, achieving expected release profiles, and structural aspects of nanofibers are all dependent upon fabrication techniques. Rapid advancements in the fabrication and characterization techniques ...
the Thermo Scientific Apreo 2 and MAPS software. ECCI utilizes channeling contrast of back-scattered electrons to provide an optimal method for crystalline defect inspection of large areas and individual defect characterization.
Fabrication and Characterization of Four-State Inverter Utilizing Quantum Dot Gate Field-Effect Transistors (QDGFETS)QUANTUM dotsQUANTUM gatesFIELD-effect transistorsMICROPROCESSORSLOGICThis paper presents the experimental results of nMOS quantum dot gate field-effect transistor (QDG-FET) based four-state ...
Mizutani, T., “Fabrication and Characterization of Carbon Nanotube FETs,” Quantum Sensing and Nanophotonic Devices II, M. Flazeghi, G.J. Brown, Ed., Proc SPIE, vol. 5732, p. 28-36.Mizutani, T., " Fabrication and Characterization of Carbon Nanotube FETs, " Quantum Sensing and ...
Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics.With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in ...
Fabrication and Characterization of Carbon Nanotube/Cu Nanocomposites by Molecular Level Mixing ProcessWe have fabricated carbon nanotube (CNT) FETs using position-controlled growth technique. The CNT-FETs showed p-type conduction. The chirality of the CNT FET channel was determined by using micro...
Fabrication and characterization of short gate-length InAAs/InGaAs/InP MODFETSInAAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off ...
than that of a cantilever beam pressure sensor.; Pt gated AlGaN/GaN HEMT-based metal-oxide semiconductor (MOS) diodes and field effect transistors (FETs) were demonstrated for detecting hydrocarbon gases, followed by a comparison between MOS and W/Pt Schottky-based GaN diodes for hydrogen sensing...