Extreme ultraviolet (EUV) lithography masksUS6984475 2003年11月3日 2006年1月10日 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masksUS6984475 * Nov 3, 2003 Jan 10, 2006 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks...
EUV lithography is a soft X-ray technology. Description Extreme ultraviolet (EUV) lithography is a soft X-ray technology, which has a wavelength of 13.5nm. Today’s EUV scanners enable resolutions down to 22nm half-pitch. In a system, an EUV light source makes use of a high power laser ...
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1) EUV extreme ultraviolet lithography 极端紫外平版印刷2) offset printing 平版印刷 1. The parameter of the dampening solution of offset printing and their function imprinting process were introduced as well as their measurement methods. 主要介绍把平版印刷的润版液参数要求及其在印刷过程中的作用,以及...
The EUV lithography market is expected to reach USD 22.69 billion by 2029 from USD 12.18 billion in 2024, at a CAGR of 13.2% during the 2024-2029 period. The growing demand for advanced semiconductor devices with smaller nodes and higher performance, driven by applications in AI, 5G, IoT, ...
The light source segment in extreme ultraviolet (EUV) lithography is anticipated to account for a major portion of the market as the component utilizes segments to generate extreme ultraviolet wavelengths required for high precision of semiconductors during the fabrication process. Liquid crystal (LC)-...
Extreme ultraviolet (EUV) lithographic patterning methods are provided which implement a surface-hardened EUV resist mask to pattern features in multiple layers. A layer of EUV resist material is formed on a substrate. An EUV resist mask is formed by exposing and developing the layer of EUV resis...
a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. 相关学科: 学科讨论 暂无讨论内容,你可以发起讨论推荐文献 发布年度 会议/ 期刊 按被引用数 Structure of the solar chromosphere. III. Models of the EUV brightness components of ...
Extreme ultraviolet (EUV) lithography masks 专利名称：Extreme ultraviolet (EUV) lithography masks 发明人：Harry J. Levinson,Bruno M. LaFontaine,Ivan Lalovic,Adam R. Pawloski 申请号：US10699767 申请日：20031103 公开号：US06984475B1 公开日：20060110 专利内容由知识产权出版社提供 专利附图：摘要：An ...
Extreme Ultraviolet ( EUV) Lithography VI(超紫外线光刻技术 VI / 会议录(丛书)) ISBN:9781628415247 豆瓣评分 目前无人评价 评价: 写笔记 写书评 加入购书单 分享到 + 加入购书单