Si(111) surfaceunrecognised (111) silicon surfacemolecular dynamic techniquescovalent Si-Si interactionshort-range repulsive interactionsThe interaction of low energy silicon atoms with an unreconstructed (111) silicon surface has been studied using molecular dynamics techniques and an accurate description ...
设测定硅时,N2O-乙炔焰温度为 3 000 ± 100 K ,Si I 251.9 nm上能级的能量为 4.95eV,下能级的能量为 0.0279eV。试计算谱线发射强度及吸光度因温度变化引起的相对波动(即I / I 及 A / A 值)。[提示:从温度变化导致波耳兹曼因子 e-E/kT变化去考虑]解:已知 λ251.9 nm, k=1.380 ×0-23JK-1,用 e...
ion implantationmetallisationpassivationSchottky-barrier diodessemiconductor-metal boundariessilicon/ Al/n-Si diodesNot Availabledoi:10.1016/0038-1101(94)90021-3P.C. SrivastavaC. ColluzaS. ChandraU.P. SinghSolid-State ElectronicsSrivastava P C, Singh U P, Coluzza C and Chandra S 1994 Solid State...
For each molecule, the H Balmer-emission cross sections at 100 eV are proportional to nb, where n 3 is the principal quantum number of the upper state of H and 3 < b < 5 is a parameter characteristic of the parent molecule. Finally, a detailed analysis of the isotopic effect between ...
For Xe and Ar scattering from Si(100), even higher {E }/{E } values are measured at low collision energy, but this is attributed to preferential neutralization of the slow noble gas ions on the surface and the resulting upshift in their ionic energy distribution. Molecular dynamics classical...
The angular distributions of the scattered species from Si(100) show a cos 3 θ isotropic scattering contribution, as well as a narrow Gaussian distribution about the specular angle, with little alteration of the kinetic energy in the scattering process. From quartz, the angular distribution is ...
Close tracks can be resolved down to 100μm distance. The width of the trail in the matrix sometimes can provide information on the energy deposition as well. A variety of applications can be imagined, the more so if several such detectors could be stacked to create a true three-dimensional...