S. H. Voldman, "The impact of MOSFET technology evolution and scaling on electrostatic discharge protection," Microelectron. Reliab., vol. 38, no. 11, pp. 1649-1668, Nov. 1998.Steven H Voldman.The impact of MOSFET technology evolution and scaling on electrostatic discharge protection. ...
MOSFET (metal-oxide silicon field effect transistor) evolution and technology scaling impacts electrostatic discharge (ESD) protection networks, design and strategy. The continous evolution of semiconductor processing forces new issues to arise for each technology generation and the evolution of MOSFET struc...
NC; and where he is now the CTO for Power and RF technology. Cree has been one of the major drivers for SiC power device technology. While he was still at NCSU, as a graduate student, Palmour filed in 1987 a critical patent leading to the development of SiC-based MOSFET transistors. ...
aAs soon as the charge pump voltage exceeds the protection MOSFETs' gate threshold, the MOSFET is driven into active mode and conducts through its low on resistance. 当灌注泵电压超出保护MOSFETs的门门限, MOSFET在抵抗被驾驶入活跃方式和品行通过它的低落。[translate] ...
We have investigated the transport properties of insulating phases in Si MOSFET's at extremely low temperatures. It has been found that insulating phases i... AA Shashkin,VT Dolgopolov,GV Kravchenko - 《Phys Rev B Condens Matter》 被引量: 93发表: 1994年 ...
TechInsights has been monitoring the evolution of STMicroelectronics Bipolar-CMOS-DMOS (BCD) technology for more than fifteen years, beginning in the year 2000 when we performed a structural and electrical characterization of a 0.8 µm BCD device with a 1999 mask date [1]. A few years later...
Modelling of the surface potential evolution for a stressed submicronic MOSFETMOSFETSurface potential evoluationPoisson's equationWe propose a model to determine the surface potential evolution for a stressed submicronic MOSFET. Stress conditions are chosen in a manner so that the interface states ...
However, there is no standardisation in naming of technology nodes. The name of a node such as 28 nm or 65 nm is actually coming from the minimum gate length of the transistor as shown in the conventional planar MOSFET configuration. Generally, technology nodes give an indication of how ...
The 100kHz to 750kHz PWM switching frequency range, and low RDS(ON) integrated N-channel MOSFET gate drivers support a plethora of external components and enable power capability and system cost optimization. The LTC3886 can readily accommodate a wide variety of industrial, medical, and ...
For benchmarking purposes, a silicon MOSFET-based design is compared with theEPC9205in figure 6. The Si MOSFET design used a lower switching frequency of 300 kHz, and the largest volume 5.6 µH inductor from series IHLP-5050FD-01 (Vishay) was selected. The electrical performance comparison ...