网络蚀量 网络释义 1. 蚀量 ...验板,并以3D光学量测仪及金像显微镜量测,可得知咬蚀量(Etching Amount)、粗糙度(Roughness)及线宽(Trace Widt… ir.nuk.edu.tw:8080|基于 1 个网页
The steps described above are repeated while shifting the predetermined time period by a predetermined time, and the detected periods are integrated and averaged at each repetition. The etching amount of the concave portion is calculated based on the integrated and averaged periods.Saito, Susumu...
This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer and a bottom of a hole H. Thereby a reflected light La and a reflected light La are obtained. The...
the same as that of a product FET 1 and the width W<Sub>2</Sub> of its active layer 5 is narrower than that of the active layer of the FET 1 is set on the same substrate together with the FET 1 as a monitoring TEG for monitoring the etching amount of the recess of the FET 1...
A significant amount of phosphorene levels reduced to a single layer may be generated due to the constant etching efficiency (Fig. 25c). The degradation is impeded by the regulating character of PxOy. The stability of phosphorene has been increased. Atomic layered deposition (ALD) was used to...
;CONSTITUTION: A substrate 10, for monitoring use, which is thinner than a substrate 7 to be etched and treated is installed outside the substrate 7 or on the substrate; it is irradiated with light 13 for measurement use; its reflection or its transmittance is measured; the etching amount ...
PROBLEM TO BE SOLVED: To realize etching characteristics with high accuracy by suppressing the etching amount of a resist by reducing the quantity of oxygen emitted from an etching chamber member into plasma, and making a pattern sidewall protective film thin. SOLUTION: An electromagnetic field intro...
also plays a role in the etch process. A strong field increases the kinetic energy of the ions, and therefore enhances the amount of physical etching, which depends on mechanical sputtering. On the other hand, low-energy ions will act essentially by chemical etching, which proceeds through surf...
An etching amount in excess of 200 nm/min has been obtained at 450 mTorr. While the etching rate of the SiO2 film formed beneath the contact hole is also enhanced, but it can be reduced lower a the pressure becomes higher. The etching rate can be reduced to 20 nm/min at the ...
Compared to the unetched counterparts, the etched Ba 3d 5/2, Ba 3d 3/2, Sr 3d 5/2, Sr 3d 3/2, Ti 2p 3/2, Ti 2p 1/2 and O 1s photoelectron peaks shift towards higher binding energy regions by amounts of 1.31, 1.30, 0.60, 0.79, 0.09, 0.46 and 0.50 eV, respectively. X-...