PURPOSE:To enable to use the Zener current, which runs to a Zener diode, to various circuits without being conscious of circuits in the interior by a method wherein a rectifying diode is connected in parallel to the output terminals of an amplifying circuit, which expands the Zener current, ...
Optical limiter (optical limiter) is a special kind of light switch, its role is equivalent to a Zener diode in electronics, the device in the case of high power laser input, output power can be limited to a relatively low level, this device is mainly for protection against laser damage ...
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast...
Zener Diode LL34bc547 transistor13001 transistors9014 transistorS2M DIODE GEN PURP 1KV 2A SMBHSZH Vishay BZG03C120-M3-18 electronic components diode diodes power amplifier semikronSB120 DIODE SCHOTTKY 20V 1A DO204ACtransistor2n2222 transistor13005 transistord2499 transistorSE8D30D-M3/I DIODE GEN ...
Equivalent CcircuitBBuilt-in Damper Diode2SC5003(50)ESilicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Display Horizontal Deflection Output, Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Char...
(6010V, 4A)2SC5576 Features Circuit diagram1) Built-in zener diode between collector and base.C2) Strong protection against reverse power surges due to "L" loads.B3) Built-in resistor between base and emitter.4) Built-in damper diode.R1 R2EB : BaseR1 4.5kC : Collector R2 300E : ...
IKB20N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for wa...
Packaging and Internal Circuit2. Packaging and Internal Circuit1. Base2. Emitter3. CollectorSOT233. Absolute Maximum Ratings ( 0.220. Size:226K toshiba tpc8038-h.pdf TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC ...
6.7W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy. 0.95. Size:...
Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power 0.154. Size:625K trinnotech tmp8n60az tmpf8n60a...