Recent successes with the fabrication of high-performance GaN-based heterostructures on silicon substrates have made this technology very promising. However, epitaxial growth of GaN on Si is challenging. This article presents some of the challenges of epitaxial growth of GaN-on-Si substrates focusing ...
专利名称：Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies 发明人：Tingkai Li,Jer-Shen Maa,Douglas J.Tweet,Wei-Wei Zhuang,Sheng Teng Hsu 申请号：US11653802 申请日：20070116 公开号：US20080171424A1 公开日：20080717 专利内容由知识产权出版社提供 专利附图...
Nevertheless, there are many challenges in the growth of high-quality GaN epitaxial films on Si substrates. Firstly, the melt-back etching of Ga-Si eutectic alloys, which directly hampers the growth of GaN epitaxial films, is easily formed during the direct growth of GaN epitaxial films on Si...
Aledia cited Veeco’s proven leadership in compound semiconductor applications, GaN-on-silicon growth performance, and capability to grow a full range of high-quality epitaxial films as key factors influencing its decision. “We have been impressed with the performance...
onsp3-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and ...
However, the achievement of the high-quality nonpolar GaN epitaxial films still faces significant challenges. In this study, the high-quality nonpolar a-plane GaN epitaxial films have been obtained on the lattice-matched LaAlO3(100) substrates through the low-temperature pulsed laser deposition. The...
some of the same challenges found in GaN LEDs: GaN is difficult and expensive to grow in bulk, so it is usually formed via heteroepitaxy on other substrates: sapphire, SiC, or silicon. For HEMTs, sapphire is less desirable because of its poor thermal conductivity. Silicon carbide (SiC) ...
Chau et al., Opportunities and Challenges of III-V Nanoelectronics for Future High-Speed, Low Power Logic Applications, IEEE CSIC Digest, 2005, pp. 17-20. Chen et al., “Dislocation reduction in GaN thin films via lateral overgrowth from trenches,” Applied Physics Letters, vol. 75, No....
2001E. Feltin et al.: " Epitaxial Lateral Overgrowth of GaN on Silicon (111) ", Phys. Stat. Sol. (a) 188, No. 2, pp. 733-737 (2001).E. Feltin et al.: “Epitaxial Lateral Overgrowth of GaN on Silicon (111)”, Phys. Stat. Sol. (a) 188, No. 2, pp. 733-737 (2001)....
E.Feltin,,B.Beaumont,,P.Vennéguès,,T.Riemann,,J.Christen,,J.P.Faurie,,P.Gibart."Epitaxial Lateral Overgrowth of GaN on Silicon(111)". Physica Status Solidi A Applied Research . 2001E. Feltin et al.: " Epitaxial Lateral Overgrowth of GaN on Silicon (111) ", Phys. Stat. Sol. ...