Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE2060K NCE2060K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain...
2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET 说明书 2N7002T Document number: DS30301 Rev. 15 - 2 1 of 5 www.diodes.com August 2018 © Diodes Incorporated Product Summary Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (R DS(ON...
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Pin Description Ordering and Marking Information N-Channel MOSFET • 30V/11A,R DS(ON) =9.5m Ω(Typ.) @ V GS = 10V R DS(ON) =13.5m Ω(Typ.) @ V GS = 4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free and...
-55 to 150 -55 to 150 0.42 40 Qty(PCS) 1000 800 Units V V A A A mJ A W ℃℃℃/W ℃/W AP180N10P/T RVE1.0 永源微電子科技有限公司 AP180N10PIT 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Conditions Min. ...
Parameter Symbol Condition Min Typ Max Unit Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.85 1.2 V VGS=2.5V, ID=2.5A - 37 59 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4....
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼100% Avalanche Test BV DSS 650V ▼ Fast Switching Characteristic R DS(ON) 2.4Ω▼ Simple Drive Requirement I D 4 4A ▼RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@T j =25o C(unless otherwise specified) Symbol Units V DS Drain...
130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263, Find Details and Price about Mosfet Power Mosfet from 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 - Jiangsu Donghai Semiconductor Co.,Ltd
TypeN-Type Semiconductor Transport PackageTape & Reel TrademarkWXDH OriginWuxi, China BrandWxdh Current120A Voltage40V Product Description SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - ...
TypeN-Type Semiconductor Transport PackageTube TrademarkWXDH OriginWuxi, China Voltage70V Current100A Product Description PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25...