The E/D gate MOSFET, which has an enhancement and depletion mode region under the same gate, is fabricated by using ion implantation as a tool for shifting threshold voltage. Threshold voltage, transconductance
We demonstrate the fabrication of depletion-mode (D-mode) and enhancement-mode (E-mode) diamond MOSFETs on the same heteroepitaxial diamond substrates. The hydrogen-terminated D-mode MOSFET with a channel length of 15 μm and a gate length of 5 μm achieves 85 mA/mm drain current at -5 ...
N-Channel Depletion-Mode Vertical D MOSFET US$1.80-2.00 / Piece IGBT Power Module Low inductance case 1200V/600A 2 in one-package Fetures Semiconductor Applications GD600HFY120C2S US$605.00 / Piece SOT-323 Plastic-Encapsulate...
NXP Semiconductors BSD22 39Kb / 6P MOSFET N-channel depletion switching transistor December 1997 Unisonic Technologies UTT36N05 214Kb / 6P N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR Fuji Electric MS5F5811 644Kb / 19P N-Channel enhancement mode power MOSFET for Switching Diodes Incorporated...
411Kb/2PDUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY ALD114804 422Kb/2PQUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY ALD1123E 55Kb/8PQUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY More results ...
The sensitiv- ity of a 4.3-nm-thick UTB device is increased by more than twice, compared to an 85 nm body device, and greater stability improve- ments can be made in this geometrical property. Results Electrical characteristics of the DG MOSFET. The electric performances of the DG MOSFETs ...
And as a result, the BV of the de- vice grows slightly. However, as the SP length is higher than 400 nm, owing to the more trapped negative charge on the interface of the SP and shorter distance between the depletion region and trapped negative charge, the Wang et al. Nanoscale ...
This paper proposes a 4H-SiC superjunction trench MOSFET with extended high-K dielectric under metal gate (EHK SJ-TMOS). The characteristics of EHK SJ-TMOS include the use of the high-K (HK) dielectric as the gate dielectric and the extension of the HK dielectric as a deep trench into...
The low-k buried dielectric restrains the depletion of the N-type drift region, so that the saturation current of the DDE LDMOS is lower than that of the HKFD LDMOS. But it is still higher than that of the CONV LDMOS. The LKBD LDMOS has the lowest saturation current because its ...
EP04144001991-02-27MOSFET depletion device. GB2209254A1989-05-04 Other References: High-Swing MOS Current Mirror with Arbitrarily High Output Resistance P. J. Crawley et al., Electronic Letters, No. 4. O. H. Schade, Jr., "Advances in BiMOS Integrated Circuits", RCA Review, vol. 39, Jun...