energy gapElectron tunneling measurements have been carried out on the orthorhombic Kondo semiconductor CeRhAs using break junction. The measurements reveal the gap size 2Δ (4K)=0.5±0.1eV. This compound exhibits the susceptibility maximum at Tχ=510K, below which the gap is believed to open. ...
Extending the analysis to the determination of V b in wide bandgap semiconductors revealed a simple linear relation between V b and 〈 E 〉, a Brillouin-zone averaged energy gap.doi:10.1002/(SICI)1521-3951(199901)211:1<335::AID-... J Allam,AR Adams - 《Physica Status Solidi》 被引量:...
Bulk levels and interface calculations for narrow band-gap semiconductors - ScienceDirect Accurate small-signal low and high frequency capacitance-voltage characteristics of Metal-Insulator-Semiconductor (MIS) devices in narrow band-gap semiconductors are presented. The unique physical features of narrow ...
Wide band gap semiconductors, and in particular silicon carbide (4H-SiC) and gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency of devices and modules. As a matter of fact, in the last decade intensive ac...
Navid Reza Moheimani, David Parlevliet, in Renewable and Sustainable Energy Reviews, 2013 3.1 The semiconductor band-gap The semiconductor band-gap, also known as the optical-gap, energy-gap or mobility-gap, is an important property of semiconductors that determines the optoelectronic properties of ...
asemiconductorisimportantsinceitis directlyrelatedtoitselectronicproperties. Asaconsequence,ithasattracteda considerableinterestinundergraduate laboratories[1-3].Severaldifferentmethods havebeendiscussedtodeterminetheband gapenergyofsemiconductors[1-4].Adiode isalsousedasatemperaturesensor[5],in whichthelinear...
The calculation of band gap energy in zinc oxide films We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor mo... A Arif,O Belahssen,S Gareh,... - 《Journal of Semiconductors》 被引量: 0发...
semiconductor superlattices/ elastic constantsstrained layer quantum well superlatticesnonparabolic semiconductorsgraded interfacesIn this paper, we study the ... S Chowdhary,LJ Singh,KP Ghatak - 《Physica B-condensed Matter》 被引量: 41发表: 2005年 Method of making a high band-gap opto-electronic...
It is shown that the band-gap energies of Zn 1 xMg xS ySe 1 y are expressed by the parabolic function of the composition considering the bowing parameter and that Zn 1 xMg xS ySe 1 y can be a direct or an indirect semiconductor depending on the alloy composition. The Zn 0.35Mg 0.65S...
Semiconductor nanowires with both nano- and micrometre dimensions have been used as effective materials for artificial photosynthesis; however, a single synthesis approach to provide rational control over the macroscopic morphology, which can allow for t