hot electronstemperature dependenceWe consider the temperature dependence of hot-carrier induced degradation effects in MOS devices. Using a 2D device simulator program capable of handling temperatures in the range 40–300 K, it is shown that the degradation is caused by interface states near the ...
5.2 Determination of homoFRET by anisotropy measurements Homotransfer is a FRET process between two identical molecules of the same fluorophore. Because donor and acceptor are spectroscopically indistinguishable, anisotropy loss caused by energy migration is the only way to study homoFRET [79]. Seven ...
e, Accumulated charge (Qacc) for different voltage shifts (Vshift; caused by memory charges) over one-half period of the a.c. signal in d. f, Comparison of the simulated and experimental capacitive coupling curves for the micrometre-scaled device shown in Fig. 2. Full size image The ...
The introduction of ethylenediammonium diiodide reduces defects but also leads to severe hysteresis caused by excessive mobilized ions. Here, authors employ hydrazine monohydrochloride as a bulk passivator to mitigate such hysteresis, achieving maximum efficiency of 28.55% for tandem solar cells. ...
At higher densities, charged particles in the plasma moving at high speeds may give rise to bremsstrahlung—radiation given off by a charged particle (most often an electron) due to its acceleration caused by an electric field of another charged particle (most often a proton or an atomic nucleu...
Grain boundaries in oxide lattice proton conductors typically exhibit blocking effects. This may be caused by the depletion of protons in space-charge zones, the formation of lower conductivity or even insulating secondary phases, or a decrease in mobility due to disruption of the structure.59In co...
As suggested by experimental results and density functional theory (DFT) analysis, the remarkable property possibly originated from the opti-mization of the adsorption and desorption of reactive intermediates caused by the reconfiguration of the electronic structure between Ru and HfO2. ...
DFT calculations indicated that the stronger bonding between Mg0.55Al-O support and solid amine was caused by the abundance of oxygen defects on MMOs confirmed by XPS and ESR, which favors the charge transfer between the support and amine, resulting in intense interaction and excellent regener...
The physical and chemical effects caused by H2O are also studied. The results show that the inert H2O, which does not participate any reactions, causes the first and third limits towards higher temperatures, while the second limit move to lower temperatures. The physical effects and chemical ...
where Δ stands for the correction one has to take for the perturbations caused in A by the dropping electron. If I is greater than EA then we would have to invest energy to help the electron over. If EA is greater than I then we would gain energy in the process and could expect the...