hot electronstemperature dependenceWe consider the temperature dependence of hot-carrier induced degradation effects in MOS devices. Using a 2D device simulator program capable of handling temperatures in the range 40–300 K, it is shown that the degradation is caused by interface states near the ...
As suggested by experimental results and density functional theory (DFT) analysis, the remarkable property possibly originated from the opti-mization of the adsorption and desorption of reactive intermediates caused by the reconfiguration of the electronic structure between Ru and HfO2. ...
Dyson-geminal (which occur in expressions for Auger intensities) or multiple-electron-overlap amplitudes. Values ofwthat occur in the remaining pairs of ±weigenvalues are likely to become larger because of the enhanced importance of orbital relaxation when two or more electrons are added or removed...
As a novel class of high-voltage cathode materials, spinel lithium transition metal oxides have been faced with demerits including pronounced structural instability caused by Jahn-Teller distortion (especially at the lower voltage region) and severe capacity degradation despite their intriguing electrochemica...
(E=4\)and merges with the other stream. The later phenomenon, which we may call the phase mixing effect, is a novel feature of the two-stream model caused by the collective wave-particle interactions in the energy band gaps. Note that in the preceding analysis (and the following) we ...
The formation of hydrated electrons from the excited state of indole derivatives hydrogen atoms indicates clearly that although both fluorescence and electron ejection originate in the excited singlet state the fluorescence quenching by protons is not caused by a transfer of electronic charge from the ex...
When two electrodes contact at a certain moment during the operation, the current becomes a single-channel DC output using mechanical delay switch, which reduces the energy loss caused by the rectifier circuit used in a traditional TENG. Inspired by the working principle of transistors, Wu et al...
In the framework of the unified theory of direct and resonance processes the disintegration of nuclei caused by high-energy electrons and protons is investigated in a wide region of nuclear excitation. As is shown, the coincidence experiments ( e, e′ N) and ( p, p′ N) can give important...
5.2 Determination of homoFRET by anisotropy measurements Homotransfer is a FRET process between two identical molecules of the same fluorophore. Because donor and acceptor are spectroscopically indistinguishable, anisotropy loss caused by energy migration is the only way to study homoFRET [79]. Seven ...
where Δ stands for the correction one has to take for the perturbations caused in A by the dropping electron. If I is greater than EA then we would have to invest energy to help the electron over. If EA is greater than I then we would gain energy in the process and could expect the...