band structure of crystalline semiconductors and insulatorselectron-phonon interactionsneonphonon dispersion relationsXalpha calculations/ lattice dynamicsrare gas crystalsphonon dispersion relationsFrohlich Hamiltonianenergy band theoryThe results of a simple local-density energy band model (X...
Group Theory and the Energy Band Structure of Semiconductors The purpose of this paper is to present the principles involved in calculating the energy band structures of semiconductors. These calculations can be simp... A Nussbaum - 《Proceedings of the Ire》 被引量: 2发表: 2007年 The Band Th...
The pseudopotential method is used to calculate the band structure of several A II B IV C V semiconductors. The calculations are carried out at the most important symmetry points of the Brillouin zone: Γ, T, N, and P. The top of the valence band and the bottom of the conduction band ...
The internal photoemission of electrons from the valence band of crystalline silicon into the conduction band of amorphous hydrogenated silicon has been studied experimentally. The photoemission process in the case of the interface between two semiconductors raises specific problems in the treatment of data...
The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and Al xGa 1 xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in...
A method of calculating the effect of the random distribution of atoms on the energy‐band structure of ternary alloy semiconductors is proposed, where the coherent‐potential approximation based on the method of linear combination of bond orbitals (LCBO) is used. In the case of GaAscP1c, the...
The energy bands of semiconductors were known only qualitatively at the time of the invention of the transistor in 1947. The real bands became known only in 1954 when Frank Herman used a combination of experimental information and W. Conyers Herring's Orthogonalized Plane Wave method to propose ...
different electronic and optical aspects of collective excitations in complex structures. A new study of pressure dependent plasmonic energy band gap in van der Waals heterostructures23reveals the importance of collective interfacial charge transfer excitons on many aspects of two-dimensional semiconductors....
Compared to indirect bandgap Ge semiconductors, carrier radiative recombination efficiencies of pseudo direct bandgap Ge semiconductors (PD-Ge) with low-intensity tensile strain and direct bandgap Ge1-xSnx alloy (D-Ge1-xSnx) with high Sn component are high. Since the carrier mobility of PD-Ge ...
(face-centered cubic structure). Most of the substances studied were semiconductors with band gaps in the range from 0.5 to 5 eV; some were small band-gap semiconductors or semi-metals; the others were insulators with band gaps larger than 5 eV. All these materials are of scientific interest...