interpolation formulaenergy band gapEnergy bandgap and lattice constant contours are presented for the six quaternary alloys formed from Al, Ga, In and P, As, Sb, with compositions of the form A x B y C(1y). D or AB x C y D 1xy . The quaternary bandgaps and lattice constants were...
Analysis of material B1/quartz and determination of the gap energy From the following formula: [2.29]αhυ∼hυ−Egn/2withn=1or2 where, depending on whether the transition between the valence band and the conduction band is direct or indirect (n = 1 or 2, respectively), we can ...
The Ca2FeH6 and Sr2FeH6 are semiconductors with an estimated indirect band gap of 1.67 eV and 1.37 eV, respectively. Dielectric constants, absorption, reflectivity, energy loss functions and refractive indices are among the optical characteristics determined by the calculations. The results of ...
Energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb. The quaternary bandgaps were obtained using an interpolation formula proposed by Moon et al. The quater nary lattice constants were obtained by use of a linear ...
Impressively, the calculated band gap of the ANFs was consistent with the experimental value (2.61 eV) (Fig. S1). The partial density of states (PDOS), as well as the wave functions for both the lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO), ...
The energy gap Eg is accurately determined from interband Landau level transitions observed in spectral measurements of photoconductivity at low temperatures in an external magnetic field. The temperature dependence of the optical absorption coefficient is measured on samples with different slopes of the ...
We propose a wide-band metamaterial perfect absorber (MPA), using the coupling in the near-field of a quadruple split-ring resonator concentric with crossed ellipses. We designed the MPA with a metal–insulator-metal (MIM) structure for use in thermal en
摘要: The schematic energy level diagram of a p-n junction made in graded-gap epitaxial CdxHg1−xTe layer is presented. This diagram explains the narrow photoresponse peak of the photovoltaic effect and its high quantum efficiency. DOI: 10.1002/pssa.2210400229 被引量: 5 年份: 1977 收藏...
Besides carbonaceous additives, another approach to improve the electronic conductivity of iron trifluoride is doping with other transition metals. As it has been predicted that Co substitution can extensively decrease the band gap from 4.49 eV for the pure fluoride to 1.46 eV for Co0.5Fe0.5F3[43...
The band gap defined as the energy difference between the top of the valence band and the bottom of the lowest conduction band is 0.56 eV which is almost a half of the value of the experimental band gap. It is known from photoemission experiments [20,21], that the top of the valence ...