A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing ...
We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear ...
Si self-diffusion in the presence of end-of-range (EOR) defects is investigated usingnatSi/28Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800–950 °C. The behavior of Si self-interstitials is investigated through the30Si self...
This study examines whether the pre-anneal step has a measurable effect on the end of range defects. Si wafers were preamorphized with Ge at 10, 12, 15, 20 and 30keV at a dose of 1×1015cm-2 and subsequently implanted with 1x1015cm-2 1keV B. Furnace anneals were performed at ...
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The amorphized source/drain regions are implanted with source/drain dopants such that the dopants extend into the substrate to a second depth less than the first depth, above and spaced apart from the end-of-range defect region created at the first depth by the amorphization process. Laser ...
- Si Front-end Processing: Physics & Technology of Dopant-defect Interactions III 被引量: 0发表: 2001年 The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon Preamorphization is commonly used to form shallow junction in silicon CMOS devices. The purposeof this ...
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